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ORCIDMicroelectronics Reliability, Volume 41
Volume 41, Number 1, January 2001
- Ninoslav Stojadinovic, Michael G. Pecht:
Editorial. 1 - Simon Deleonibus:
Alternative CMOS or alternative to CMOS? 3-12 - Joachim N. Burghartz:
Status and trends of silicon RF technology. 13-19 - Mattia Borgarino
, Roberto Menozzi, Domenico Dieci, Laura Cattani, Fausto Fantini:
Reliability physics of compound semiconductor transistors for microwave applications. 21-30 - Wim Magnus, Wim Schoenmaker:
On the calculation of gate tunneling currents in ultra-thin metal-insulator-semiconductor capacitors. 31-35 - Nian Yang, Jimmie J. Wortman:
A study of the effects of tunneling currents and reliability of sub-2 nm gate oxides on scaled n-MOSFETs. 37-46 - Akinobu Teramoto, H. Umeda, K. Azamawari, Kiyoteru Kobayashi, K. Shiga, J. Komori, Y. Ohno, A. Shigetomi:
Time-dependent dielectric breakdown of SiO2 films in a wide electric field range. 47-52 - Peter Coppens, Guido Vanhorebeek, Eddy De Backer:
Correlation between predicted cause of SRAM failures and in-line defect data. 53-57 - Milan Jevtic, Zdravko I. Stanimirovic, Ivanka P. Stanimirovic:
Evaluation of thick-film resistor structural parameters based on noise index measurements. 59-66 - Gady Golan, E. Rabinovich, A. Inberg, Alex Axelevitch, Gennady Lubarsky, Pier Giorgio Rancoita, M. Demarchi, A. Seidman, N. Croitoru:
Inversion phenomenon as a result of junction damages in neutron irradiated silicon detectors. 67-72 - Javier Mateos, Tomás González, Daniel Pardo, Virginie Hoel, Alain Cappy:
Monte Carlo simulation of electronic characteristics in short channel δ-doped AlInAs/GaInAs HEMTs. 73-77 - Hidenori Ohyama, Eddy Simoen, S. Kuroda, Cor Claeys, Y. Takami, T. Hakata, K. Kobayashi, M. Nakabayashi, Hiromi Sunaga:
Degradation and recovery of AlGaAs/GaAs p-HEMT irradiated by high-energy particle. 79-85 - B. K. Jones, C. N. Graham, A. Konczakowska, L. Hasse:
The coherence of the gate and drain noise in stressed AlGaAs-InAlGaAs PHEMTs. 87-97 - Gaetano Ferrante, Dominique Persano Adorno:
A wavelet analysis of 1/f and white noise in microwave transistors. 99-104 - X. Y. Chen, A. Pedersen, A. D. van Rheenen:
Effect of electrical and thermal stress on low-frequency noise characteristics of laser diodes. 105-110 - H. Oohashi, M. Fukuda, Yasuhiro Kondo, M. Yamamoto, Y. Kadota, Yoshihiro Kawaguchi, K. Kishi, Y. Tohmori, K. Yokoyama, Y. Itaya:
Highly reliable spot-size converter integrated laser diodes over a wide temperature range for access network systems. 111-118 - Chern-Sheng Lin, Li Wen Lue:
An image system for fast positioning and accuracy inspection of ball grid array boards. 119-128 - Fuchen Mu, Changhua Tan, Mingzhen Xu:
Proportional difference estimate method of determining characteristic parameters of normal and log-normal distributions. 129-131 - Klaus-Willi Pieper, Martin Sauter:
Direct temperature measurement of integrated microelectronic devices by thermally induced leakage currents. 133-136 - M. M. Shahidul Hassan, A. H. Khandoker:
New expression for base transit time in a bipolar transistor for all levels of injection. 137-140 - Milan Jevtic:
Guidebook for Managing Silicon Chip Reliability; Michael G. Pecht, Riko Radojcic, Gopal Rao. CRC Press LLC, Boca Raton, 1999, 224 pp. ISBN: 0-8493-9624-7. 141-142 - Ninoslav Stojadinovic:
Understanding Semiconductor Devices; Sima Dimitrijev. Oxford University Press, New York. 2000. ISBN: 0-19-513186-X. 142-143
Volume 41, Number 2, February 2001
- F. Schwierz, Juin J. Liou:
Semiconductor devices for RF applications: evolution and current status. 145-168 - Merlyne M. De Souza, J. Wang, S. K. Manhas, E. M. Sankara Narayanan, A. S. Oates:
A comparison of early stage hot carrier degradation behaviour in 5 and 3 V sub-micron low doped drain metal oxide semiconductor field effect transistors. 169-177 - Hei Wong, P. G. Han, M. C. Poon, Y. Gao:
Investigation of the surface silica layer on porous poly-Si thin films. 179-184 - M. N. Levin, V. R. Gitlin, S. G. Kadmensky, S. S. Ostrouhov, V. S. Pershenkov:
X-ray and UV controlled adjustment of MOS VLSI circuits threshold voltages. 185-191 - Kin P. Cheung:
Unifying the thermal-chemical and anode-hole-injection gate-oxide breakdown models. 193-199 - C. T. Hsu, M. M. Lau, Y. T. Yeow:
Analysis of the gate capacitance measurement technique and its application for the evaluation of hot-carrier degradation in submicrometer MOSFETs. 201-209 - Robert C. Baumann, Eric B. Smith:
Neutron-induced 10B fission as a major source of soft errors in high density SRAMs. 211-218 - Alexander N. Bubennikov, Andrey V. Zykov:
Investigations of impact ionization phenomena in advanced transistors and speed-power improvement of BiMOS SRAM cells based on reverse base current effect. 219-228 - Gábor Harsányi, George Inzelt:
Comparing migratory resistive short formation abilities of conductor systems applied in advanced interconnection systems. 229-237 - Constance E. Schuster, Mark G. Vangel, Harry A. Schafft:
Improved estimation of the resistivity of pure copper and electrical determination of thin copper film dimensions. 239-252 - Liviu Militaru, A. Souifi, M. Mouis, Alain Chantre, G. Brémond:
Investigation of deep traps in silicon-germanium epitaxial base bipolar transistors with a single polysilicon quasi self-aligned architecture. 253-263 - Nicolas Valdaperez, Jean-Marc Routoure, Daniel Bloyet, Régis Carin, Serge Bardy, Jacques Lebailly:
Low-frequency noise in single-poly bipolar transistors at low base current density. 265-271 - Andrew C. Lamb, J. F. W. Schiz, J. M. Bonar, Fuccio Cristiano, Peter Ashburn, Stephen Hall, Peter L. F. Hemment:
Characterisation of emitter/base leakage currents in SiGe HBTs produced using selective epitaxy. 273-279 - Jingsong Xie, Michael G. Pecht, David DeDonato, Ali Hassanzadeh:
An investigation of the mechanical behavior of conductive elastomer interconnects. 281-286 - P. L. Tu, Y. C. Chan, K. C. Hung, J. K. L. Lai:
Study of micro-BGA solder joint reliability. 287-293 - Shatil Haque, Kalyan Siddabattula, Mike Craven, Sihua Wen, Xingsheng Liu, Dushan Boroyevich, Guo-Quan Lu:
Design issues of a three-dimensional packaging scheme for power modules. 295-305 - L. Y. Sheng, C. De Tandt, Willy Ranson, Roger Vounckx:
Reliability aspects of thermal micro-structures implemented on industrial 0.8 mum CMOS chips. 307-315 - Loren J. Wise, Ronald D. Schrimpf, Harold G. Parks, Kenneth F. Galloway:
A generalized model for the lifetime of microelectronic components, applied to storage conditions. 317-322 - Asad A. Ismaeel, Rajan Mathew, R. Bhatnagar:
Module allocation with idle-time utilization for on-line testability. 323-332
Volume 41, Number 3, March 2001
- Koen G. Verhaege:
Editorial. 333 - Steven H. Voldman, W. Anderson, R. Ashton, M. Chaine, Charvaka Duvvury, T. Maloney, E. Worley:
A strategy for characterization and evaluation of ESD robustness of CMOS semiconductor technologies. 335-348 - Jeremy C. Smith:
An anti-snapback circuit technique for inhibiting parasitic bipolar conduction during EOS/ESD events. 349-357 - Timothy J. Maloney, Wilson Kan:
Stacked PMOS clamps for high voltage power supply protection. 359-366 - Warren R. Anderson, William M. Gonzalez, Sheera S. Knecht, Wendy Fowler:
Reliability considerations for ESD protection under wire bonding pads. 367-373 - Karlheinz Bock, Bart Keppens, Vincent De Heyn, Guido Groeseneken, L. Y. Ching, A. Naem:
Influence of gate length on ESD-performance for deep submicron CMOS technology. 375-383 - Harald Gossner, T. Müller-Lynch, Kai Esmark, Matthias Stecher:
Wide range control of the sustaining voltage of electrostatic discharge protection elements realized in a smart power technology. 385-393 - Gianluca Boselli, Stan Meeuwsen, Ton J. Mouthaan, Fred G. Kuper:
Investigations on double-diffused MOS transistors under ESD zap conditions. 395-405 - Leo G. Henry, Mark A. Kelly, Tom Diep, Jon Barth:
Issues concerning charged device model ESD verification modules - the need to move to alumina. 407-415 - Ming-Dou Ker, Yu-Yu Sung:
Hardware/firmware co-design in an 8-bits microcontroller to solve the system-level ESD issue on keyboard. 417-429 - P. Schauer, Josef Sikula, Pavel Moravec:
Transport and noise properties of CdTe(Cl) crystals. 431-436 - R. Dreesen, Kris Croes, Jean Manca, Ward De Ceuninck, Luc De Schepper, A. Pergoot, Guido Groeseneken:
A new degradation model and lifetime extrapolation technique for lightly doped drain nMOSFETs under hot-carrier degradation. 437-443 - A. H. Fischer, A. Abel, M. Lepper, A. E. Zitzelsberger, A. von Glasow:
Modeling bimodal electromigration failure distributions. 445-453 - Keizo Yamada, Toyokazu Nakamura, Tohru Tsujide:
An in-line process monitoring method using electron beam induced substrate current. 455-459 - Thomas D. Moore, John L. Jarvis:
Improved reliability in small multichip ball grid arrays. 461-469 - Christian Rembe, Harald Aschemann, Stefan aus der Wiesche, Eberhard P. Hofer, Hélène Debéda, Jürgen Mohr, Ulrike Wallrabe:
Testing and improvement of micro-optical-switch dynamics. 471-480
Volume 41, Number 4, April 2001
- Ninoslav Stojadinovic, Michael G. Pecht:
In memory of D. Stewart Peck. 481 - Udo Schwalke:
Progress in device isolation technology. 483-490 - Roland Reicher, Walter Smetana, Julius C. Schuster, Alexander Adlaßnig:
A fritless copper conductor system for power electronic applications. 491-498 - Dale W. Swanson, Leonard R. Enlow:
Stress effects of epoxy adhesives on ceramic substrates and magnetics. 499-510 - Kai F. Dombrowski, B. Dietrich, Ingrid De Wolf, R. Rooyackers, G. Badenes:
Investigation of stress in shallow trench isolation using UV micro-Raman spectroscopy. 511-515 - M. P. Rodriguez, Noel Y. A. Shammas:
Finite element simulation of thermal fatigue in multilayer structures: thermal and mechanical approach. 517-523 - Yutaka Kumano, Yoshihiro Tomura, Minehiro Itagaki, Yoshihiro Bessho:
Development of chip-on-flex using SBB flip-chip technology. 525-530 - Dubravka Rocak, Darko Belavic, Marko Hrovat, Josef Sikula, Pavel Koktavy, Jan Pavelka, Vlasta Sedlakova:
Low-frequency noise of thick-film resistors as quality and reliability indicator. 531-542 - T. Pompl, C. Engel, H. Wurzer, Martin Kerber:
Soft breakdown and hard breakdown in ultra-thin oxides. 543-551 - Quan Qi:
Reliability studies of two flip-chip BGA packages using power cycling test. 553-562 - Zsolt Illyefalvi-Vitéz:
Laser processing for microelectronics packaging applications. 563-570 - D. Greg Walker, T. S. Fisher, J. Liu, Ronald D. Schrimpf:
Thermal modeling of single event burnout failure in semiconductor power devices. 571-578 - R. Kolarova, Thomas Skotnicki, J. A. Chroboczek:
Low frequency noise in thin gate oxide MOSFETs. 579-585 - Koji Eriguchi, Yoshinao Harada, Masaaki Niwa:
Effects of base layer thickness on reliability of CVD Si3N4 stack gate dielectrics. 587-595 - Hongxia Ren, Yue Hao:
Study on the degradation induced by donor interface state in deep-sub-micron grooved-gate P-channel MOSFET's. 597-604 - Magali Estrada, Antonio Cerdeira, Adelmo Ortiz-Conde, Francisco J. García-Sánchez:
Determination of trap cross-section in a-Si: H p-i-n diodes parameters using simulation and parameter extraction. 605-610 - Valentin Videkov, Slavka Tzanova, Radosvet Arnaudov, Nikolai Iordanov:
New assembling technique for BGA packages without thermal processes. 611-615 - Ammar M. Sarhan, Abdul-Rahman M. Abouammoh:
Reliability of k-out-of-n nonrepairable systems with nonindependent components subjected to common shocks. 617-621 - Milan Jevtic:
Optimal Reliability Design: Fundamentals and Applications; Way Kuo, Rajendra Prasad, Frank A. Tillman, Ching-Lai Mwang. Cambridge University Press, Cambridge, 2001, 389+XXI pp. ISBN: 0-521-78127-2 (hardbound). 623-624
Volume 41, Number 5, May 2001
- Elyse Rosenbaum, Jie Wu:
Trap generation and breakdown processes in very thin gate oxides. 625-632 - Petteri Palm, Jarmo Määttänen, Aulis Tuominen, Eero Ristolainen:
Reliability of 80 mum pitch flip chip attachment on flex. 633-638 - Shatil Haque, Guo-Quan Lu:
Effects of device passivation materials on solderable metallization of IGBTs. 639-647 - Everett E. King, Ronald C. Lacoe, Janet Wang-Ratkovic:
Influence of the lightly doped drain resistance on the worst-case hot-carrier stress condition for NMOS devices. 649-660 - Jaakko Lenkkeri, Tuomo Jaakola:
Rapid power cycling of flip-chip and CSP components on ceramic substrates. 661-668 - Andrzej Dziedzic, Leszek J. Golonka, Jaroslaw Kita, Heiko Thust, Karl-Heinz Drue, Reinhard Bauer, Lars Rebenklau, Klaus-Jürgen Wolter:
Electrical and stability properties and ultrasonic microscope characterisation of low temperature co-fired ceramics resistors. 669-676 - S. C. Hung, P. J. Zheng, S. H. Ho, S. C. Lee, H. N. Chen, J. D. Wu:
Board level reliability of PBGA using flex substrate. 677-687 - Yung-Huei Lee, Tom Linton, Ken Wu, Neal R. Mielke:
Effect of trench edge on pMOSFET reliability. 689-696 - Takayuki Yamada, Masaru Moriwaki, Yoshinao Harada, Shinji Fujii, Koji Eriguchi:
Effects of the sputtering deposition process of metal gate electrode on the gate dielectric characteristics. 697-704 - Greg Hotchkiss, Gonzalo Amador, Darvin Edwards, Paul Hundt, Les Stark, Roger Stierman, Gail Heinen:
Wafer level packaging of a tape flip-chip chip scale packages. 705-713 - Harry K. Charles Jr.:
Tradeoffs in multichip module yield and cost with known good die probability and repair. 715-733 - Frank Stepniak:
Conversion of the under bump metallurgy into intermetallics: the impact on flip chip reliability. 735-744 - Kin P. Cheung:
Impact of ESD protection device trigger transient on the reliability of ultra-thin gate oxide. 745-749 - Terence B. Hook, David Harmon, Chuan Lin:
Plasma process-induced damage on thick (6.8 nm) and thin (3.5 nm) gate oxide: parametric shifts, hot-carrier response, and dielectric integrity degradation. 751-765 - Dragan Manic, J. Petr, Rade S. Popovic:
Die stress drift measurement in IC plastic packages using the piezo-Hall effect. 767-771 - O. Mrooz, A. Kovalski, J. Pogorzelska, O. I. Shpotyuk, M. Vakiv, Bohdan S. Butkiewicz, J. Maciak:
Thermoelectrical degradation processes in NTC thermistors for in-rush current protection of electronic circuits. 773-777
Volume 41, Number 6, June 2001
- Brian K. Jones:
In the memory of Yisong Dai. 779 - Stephen O'Reilly, Maeve Duffy, Thomas Ott, Terence O'Donnell, Paul McCloskey, S. Cian O'Mathuna:
Characterisation of embedded filters in advanced printed wiring boards. 781-788 - Roland Sorge, Bernd Heinemann:
Recombination current measurements in the space charge region of MOS field-induced pn junctions. 789-795 - Mark Zwolinski:
A technique for transparent fault injection and simulation in VHDL. 797-804 - Michael J. Dion:
Improved understanding of metal ion reservoirs within barrier-metal systems. 805-814 - Michael Schenkel, Paul Pfäffli, Wolfgang Wilkening, D. Aemmer, Wolfgang Fichtner:
Substrate potential shift due to parasitic minority carrier injection in smart-power ICs: measurements and full-chip 3D device simulation. 815-822 - Mirko Jakovljevic, Peter A. Fotiu, Zeljko Mrcarica, Vanco B. Litovski, Helmut Detter:
Electro-thermal simulation of microsystems with mixed abstraction modelling. 823-835 - Slobodan Mijalkovic:
A new finite element approach to stress analysis in microfabrication technology. 837-845 - M. J. Martín-Martínez, Susana Pérez, Daniel Pardo, Tomás González:
High injection effects on noise characteristics of Si BJTs and SiGe HBTs. 847-854 - Sébastien Haendler, Jalal Jomaah, Gérard Ghibaudo, Francis Balestra:
Improved analysis of low frequency noise in dynamic threshold MOS/SOI transistors. 855-860 - Michael Scheffler, Didier Cottet, Gerhard Tröster:
A simplified yield modeling method for design rule trade-off in interconnection substrates. 861-869 - Gady Golan, Alex Axelevitch, E. Rabinovitch:
Effects of electron beam generated in vacuum photo-thermal processing on metal-silicon contacts. 871-879 - Martin Sandén, B. Gunnar Malm, Jan V. Grahn, Mikael Östling:
Lateral base design rules for optimized low-frequency noise of differentially grown SiGe heterojunction bipolar transistors. 881-886 - J. Barton, G. McCarthy, R. Doyle, K. Delaney, Enric Cabruja, Manuel Lozano, Ana Collado, Joaquín Santander:
Reliability evaluation of a silicon-on-silicon MCM-D package. 887-899 - F. N. Masana:
A new approach to the dynamic thermal modelling of semiconductor packages. 901-912 - W. Y. Ho, C. Surya:
Study of light-induced annealing effects in a-Si: H thin films. 913-917 - Yisong Dai:
Generation-recombination noise in bipolar transistors. 919-925 - Lingfeng Mao, Changhua Tan, Mingzhen Xu:
The effect of image potential on electron transmission and electric current in the direct tunneling regime of ultra-thin MOS structures. 927-931
Volume 41, Number 7, July 2001
- Georges Charitat:
In memory of Pierre Rossel. 933-934 - Andreas Martin:
Editorial. 935 - Gerald Lucovsky, Gilbert B. Rayner, Robert S. Johnson:
Chemical and physical limits on the performance of metal silicate high-k gate dielectrics. 937-945 - Thomas Mikolajick, Christine Dehm, Walter Hartner, Ivan Kasko, Marcus J. Kastner, Nicolas Nagel, Manfred Moert, Carlos Mazure:
FeRAM technology for high density applications. 947-950 - P. O'Sullivan, Raphael Clerc, Kevin G. McCarthy, Alan Mathewson, Gérard Ghibaudo:
Direct tunnelling models for circuit simulation. 951-957 - Gilles Reimbold, T. Poiroux:
Plasma charging damage mechanisms and impact on new technologies. 959-965 - R. Falster, F. Bonoli, V. V. Voronkov:
Dielectric breakdown distributions for void containing silicon substrates. 967-971 - G. Innertsberger, T. Pompl, Martin Kerber:
The influence of p-polysilicon gate doping on the dielectric breakdown of PMOS devices. 973-975 - A. Stadler, I. Genchev, A. Bergmaier, G. Dollinger, Vesselinka Petrova-Koch, Walter Hansch, H. Baumgärtner, I. Eisele:
Nitrogen implantations for rapid thermal oxinitride layers. 977-980 - Laurent Jalabert, Pierre Temple-Boyer, Gérard Sarrabayrouse, F. Cristiano, B. Colombeau, F. Voillot, C. Armand:
Reduction of boron penetration through thin silicon oxide with a nitrogen doped silicon layer. 981-985 - Michael P. M. Jank, Martin Lemberger, Anton J. Bauer, Lothar Frey, Heiner Ryssel:
Electrical reliability aspects of through the gate implanted MOS structures with thin oxides. 987-990 - H. Jörg Osten, J. P. Liu, H.-J. Müssig, P. Zaumseil:
Epitaxial, high-K dielectrics on silicon: the example of praseodymium oxide. 991-994 - Chao Zhao, Gert Roebben, Hugo Bender, Edward Young, S. Haukka, Michel Houssa, Mohamed Naili, Stefan De Gendt, Marc M. Heyns, Omer Van der Biest:
In situ crystallisation in ZrO2 thin films during high temperature X-ray diffraction. 995-998 - N. Galbiati, G. Ghidini, C. Cremonesi, Luca Larcher:
Impact of the As dose in 0.35 mum EEPROM technology: characterization and modeling. 999-1002 - Daniela Brazzelli, Gabriella Ghidini, C. Riva:
Optimization of WSi2 by SiH4 CVD: impact on oxide quality. 1003-1006 - Udo Schwalke, Martin Pölzl, Thomas Sekinger, Martin Kerber:
Ultra-thick gate oxides: charge generation and its impact on reliability. 1007-1010 - Rosana Rodríguez, Marc Porti, Montserrat Nafría, Xavier Aymerich:
Influence of a low field with opposite polarity to the stress on the degradation of 4.5 nm thick SiO2 films. 1011-1013 - Marian Badila, Philippe Godignon, José Millán, S. Berberich, Gheorghe Brezeanu:
The electron irradiation effects on silicon gate dioxide used for power MOS devices. 1015-1018 - Gunnar Diestel, Andreas Martin, Martin Kerber, Alfred Schlemm, Horst Erlenmaier, Bernhard Murr, Andreas Preussger:
Quality assessment of thin oxides using constant and ramped stress measurements. 1019-1022 - Damien Zander, Christian Petit, F. Saigné, A. Meinertzhagen:
High field stress at and above room temperature in 2.3 nm thick oxides. 1023-1026 - Raphael Clerc, Alessandro S. Spinelli, Gérard Ghibaudo, Charles Leroux, G. Pananakakis:
Electrical characterization and quantum modeling of MOS capacitors with ultra-thin oxides (1.4-3 nm). 1027-1030 - S. Bruyère, David Roy, E. Robilliart, E. Vincent, Gérard Ghibaudo:
Body effect induced wear-out acceleration in ultra-thin oxides. 1031-1034 - Frederic Monsieur, E. Vincent, G. Pananakakis, Gérard Ghibaudo:
Wear-out, breakdown occurrence and failure detection in 18-25 Å ultrathin oxides. 1035-1039 - Marc Porti, X. Blasco, Montserrat Nafría, Xavier Aymerich, Alexander Olbrich, Bernd Ebersberger:
Local current fluctuations before and after breakdown of thin SiO2 films observed with conductive atomic force microscope. 1041-1044 - Nihar R. Mohapatra, Arijit Dutta, G. Sridhar, Madhav P. Desai, V. Ramgopal Rao:
Sub-100 nm CMOS circuit performance with high-K gate dielectrics. 1045-1048 - A. Kumar, S. Mahapatra, R. Lal, V. Ramgopal Rao:
Multi-frequency transconductance technique for interface characterization of deep sub-micron SOI-MOSFETs. 1049-1051 - Barry J. O'Sullivan, Paul K. Hurley, F. N. Cubaynes, P. A. Stolk, F. P. Widdershoven:
Flat band voltage shift and oxide properties after rapid thermal annealing. 1053-1056 - V. Mikhelashvili, Gadi Eisenstein:
Optical and electrical characterization of the electron beam gun evaporated TiO2 film. 1057-1061 - G. Borsoni, N. Béchu, M. Gros-Jean, Michael L. Korwin-Pawlowski, R. Laffitte, V. Le Roux, L. Vallier, Névine Rochat, C. Wyon:
Ultra-thin oxides on silicon fabricated using ultra-slow multicharged ion beams. 1063-1066 - Jan-Werner Zahlmann-Nowitzki, Lars Nebrich, Peter Seegebrecht:
On the influence of the variation of measurement conditions on the FNT characteristics of stressed thin silicon oxides. 1067-1069 - N. Asli, M. I. Vexler, A. F. Shulekin, P. Douglas Yoder, I. V. Grekhov, Peter Seegebrecht:
Threshold energies in the light emission characteristics of silicon MOS tunnel diodes. 1071-1076 - Daniel Hill, X. Blasco, Marc Porti, Montserrat Nafría, Xavier Aymerich:
Characterising the surface roughness of AFM grown SiO2 on Si. 1077-1079 - Detlef Weber, F. Höhnsdorf, A. Hausmann, A. Klipp, Z. Stavreva, J. Herrmann, L. Bauch, M. Junack, H. Neef, M. Nichterwitz, S. Finsterbusch:
Impact of substituting SiO2 ILD by low k materials into AlCu RIE metallization. 1081-1083 - S. Strobel, Anton J. Bauer, Matthias Beichele, Heiner Ryssel:
Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode in PMOS devices. 1085-1088 - Matthias Beichele, Anton J. Bauer, Heiner Ryssel:
Reliability of ultrathin nitrided oxides grown in low pressure N2O ambient. 1089-1092 - J. Dabrowski, V. Zavodinsky, A. Fleszar:
Pseudopotential study of PrO2 and HfO2 in fluorite phase. 1093-1096 - Bakuri Lanchava, Peter Baumgartner, Andreas Martin, Armand Beyer, Erich Mueller:
Oxide reliability: influence of interface roughness, structure layout, and depletion layer formation. 1097-1100
Volume 41, Number 8, August 2001
- Wallace T. Anderson, Roberto Menozzi:
Editorial. 1101 - Joachim Würfl, Paul Kurpas, Frank Brunner, Michael Mai, Matthias Rudolph, Markus Weyers:
Degradation properties of MOVPE-grown GaInP/GaAs HBTs under combined temperature and current stressing. 1103-1108 - Wallace T. Anderson, Jason A. Roussos, Jeffrey A. Mittereder, Dimitrios E. Ioannou, C. Moglestue:
Pseudomorphic high electron mobility transistor monolithic microwave integrated circuits reliability study. 1109-1113 - Bruce M. Paine, Richard C. Wong, Adele E. Schmitz, Robert H. Walden, Loi D. Nguyen, Michael J. Delaney, Kenny C. Hum:
Ka-band InP high electron mobility transistor monolithic microwave integrated circuit reliability. 1115-1122 - William J. Roesch:
Volume impacts on GaAs reliability improvement. 1123-1127 - Stephen Thomas III, Charles H. Fields, Meena Madhav:
RF modeling approach to determining end-of-life reliability for InP-based HBTs. 1129-1135 - Peter Dai, Philip Canfield:
Location of defective cells in HBT power amplifier arrays using IR emission microscopy. 1137-1141 - Daniel L. Barton, Shigeru Nakajima, Massimo Vanzi:
Editorial. 1143-1144 - Edward I. Cole Jr.:
Global fault localization using induced voltage alteration. 1145-1159 - Ingrid De Wolf, Mahmoud Rasras:
Spectroscopic photon emission microscopy: a unique tool for failure analysis of microelectronics devices. 1161-1169 - Yasuhiro Mitsui, Fumiko Yano, Hiroshi Kakibayashi, Hiroyasu Shichi, Takashi Aoyama:
Developments of new concept analytical instruments for failure analyses of sub-100 nm devices. 1171-1183 - K. Krieg, Douglas J. Thomson, Gregory E. Bridges:
Electrical probing of deep sub-micron integrated circuits using scanning probes. 1185-1191 - Silke Liebert:
Failure analysis from the back side of a die. 1193-1201 - Chisato Hashimoto, Takamitsu Takizawa, Sigeru Nakajima, Mitsuru Shinagawa, Tadao Nagatsuma:
Observation of the internal waveforms in high-speed high-density LSIs using an EOS prober. 1203-1209 - Lee A. Knauss, A. B. Cawthorne, N. Lettsome, S. Kelly, S. Chatraphorn, E. F. Fleet, F. C. Wellstood, W. E. Vanderlinde:
Scanning SQUID microscopy for current imaging. 1211-1229 - Bernd Ebersberger, Alexander Olbrich, Christian Boit:
Scanning probe microscopy in semiconductor failure analysis. 1231-1236 - J. M. Chin, J. C. H. Phang, D. S. H. Chan, M. Palaniappan, G. Gilfeather, C. E. Soh:
Single contact optical beam induced currents. 1237-1242 - Tohru Koyama, Masataka Umeno, Kenichiro Sonoda, Junko Komori, Yoji Mashiko:
Locally delineating of junctions and defects by local cross-section electron-beam-induced-current technique. 1243-1253 - Yuan Ji, Ziguo Li, Dong Wang, Yaohai Cheng, Dong Luo, Bin Zong:
Scanning thermal microscopy studies of local temperature distribution of micron-sized metallization lines. 1255-1258 - M. K. Mazumder, S. Yamamoto, H. Maeda, J. Komori, Y. Mashiko:
Mechanism of pre-annealing effect on electromigration immunity of Al-Cu line. 1259-1264 - Hide Murayama, Makoto Yamazaki, Shigeru Nakajima:
Electromigration and electrochemical reaction mixed failure mechanism in gold interconnection system. 1265-1272
Volume 41, Numbers 9-10, September - October 2001
- Lifeng Wu, Zhihong Liu:
Full-Chip Reliability Simulation for VDSM Integrated Circuits. 1273-1278 - Per-Olof Fägerholt:
Reliability improvements in passive components. 1279-1288 - A. Muehlhoff:
An Extrapolation Model for Lifetime Prediction for Off-State - Degradation of MOS-FETs. 1289-1293 - Frederic Monsieur, E. Vincent, David Roy, S. Bruyère, G. Pananakakis, Gérard Ghibaudo:
Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions. 1295-1300 - Young Pil Kim, Beom Jun Jin, Young Wook Park, Joo Tae Moon, Sang U. Kim:
Analysis of retention tail distribution induced by scaled shallow trench isolation for high densityDRAMs. 1301-1305 - Nathalie Revil, Xavier Garros:
Hot-Carrier Reliability for Si and SiGe HBTs: Aging Procedure, Extrapolation Model Limitations and Applications. 1307-1312 - Alain Bravaix, Didier Goguenheim, Nathalie Revil, E. Vincent:
Injection Mechanisms and Lifetime Prediction with the Substrate Voltage in 0.15mum Channel-Length N-MOSFETs. 1313-1318 - Helmut Puchner, Y.-C. Liu, W. Kong, F. Duan, R. Castagnetti:
Substrate Engineering to Improve Soft-Error-Rate Immunity for SRAM Technologies. 1319-1324 - Hamid Toutah, Jean-François Llibre, Boubekeur Tala-Ighil, Taieb Mohammed-Brahim, Youri Helen, G. Gautier, Olivier Bonnaud:
Improved Stability of Large Area Excimer Laser Crstallised Polysilicon Thin Film Transistors under DC and AC Operating. 1325-1329 - Yannick Rey-Tauriac, M. Taurin, Olivier Bonnaud:
Wafer Level Accelerated test for ionic contamination control on VDMOS transistors in Bipolar/CMOS/DMOS. 1331-1334 - Xavier Gagnard, Yannick Rey-Tauriac, Olivier Bonnaud:
Polysilicon oxide quality optimization at Wafer level of a Bipolar/CMOS/DMOS technology. 1335-1340 - M. Nakabayashi, Hidenori Ohyama, Eddy Simoen, M. Ikegami, Cor Claeys, K. Kobayashi, M. Yoneoka, K. Miyahara:
Reliability of polycrystalline silicon thin film resistors. 1341-1346 - A. Ghetti, M. Alam, J. Bude:
Anode hole generation mechanisms. 1347-1354 - D. Zander, F. Saigné, A. Meinertzhagen:
Creation and thermal annealing of interface states induced by uniform or localized injection in 2.3nm thick oxides. 1355-1360 - M. Fadlallah, Arkadiusz Szewczyk, C. Giannakopoulos, B. Cretu, Frederic Monsieur, T. Devoivre, Jalal Jomaah, Gérard Ghibaudo:
Low frequency noise and reliability properties pf 0.12 mum CMOS devices with Ta2O5 as gate dielectrics. 1361-1366 - S. Bruyère, Frederic Monsieur, David Roy, E. Vincent, Gérard Ghibaudo:
Failures in ultrathin oxides: Stored energy or carrier energy driven? 1367-1372 - Ninoslav Stojadinovic, Ivica Manic, Snezana Djoric-Veljkovic, Vojkan Davidovic, Snezana Golubovic, Sima Dimitrijev:
Mechanisms of positive gate bias stress induced instabilities in power VDMOSFETs. 1373-1378 - K. Gonf, H. G. Feng, R. Y. Zhan, A. Z. Wang:
ESD-Induced Circuit Performance Degradation in RFICs. 1379-1383 - Martin Litzenberger, R. Pichler, Sergey Bychikhin, Dionyz Pogany, Erich Gornik, Kai Esmark, Harald Gossner:
Effect of pulse risetime on trigger homogeneity in single finger grounded gate nMOSFET electrostatic discharge protection devices. 1385-1390 - N. Tosic Golo, S. van der Wal, Fred G. Kuper, Ton J. Mouthaan:
The time-voltage trade-off for ESD damage threshold in amorphous silicon hydrogenated thin-film transistors. 1391-1396 - Joachim C. Reiner, Thomas Keller:
Relevance of contact reliability in HBM-ESD test equipment. 1397-1401 - Jan Ackaert, Zhichun Wang, Eddy De Backer, P. Colson, Peter Coppens:
Non Contact Surface Potential Measurements for Charging Reduction During Manufacturing of Metal-Insulator-Metal Capacitors. 1403-1407 - Shinji Yokogawa, Norio Okada, Yumi Kakuhara, Hideyuki Takizawa:
Electromigration Performance of Multi-level Damascene Copper Interconnects. 1409-1416 - François Dieudonné, F. Daugé, Jalal Jomaah, C. Raynaud, Francis Balestra:
An overview of hot-carrier induced degradation in 0.25 mum Partially and Fully Depleted SOI N-MOSFET's. 1417-1420 - François Lime, Gérard Ghibaudo, G. Guégan:
Stress induced leakage current at low field in ultra thin oxides. 1421-1425 - Gang Chen, Ming Fu Li, Ying Jin:
Electric passivation of interface traps at drain junction space charge region in p-MOS transistors. 1427-1431 - A. Guilhaume, Philippe Galy, J. P. Chante, B. Foucher, F. Blanc:
Simulation and experimental comparison of GGNMOS and LVTSCR protection cells under ElectroStatic Discharges. 1433-1437 - Kris Croes, R. Dreesen, Jean Manca, Ward De Ceuninck, Luc De Schepper, Luc Tielemans, P. J. van der Wel:
High-resolution in-situ of gold electromigration: test time reduction. 1439-1442 - Hidenori Ohyama, M. Nakabayashi, Eddy Simoen, Cor Claeys, T. Tanaka, T. Hirao, S. Onada, K. Kobayashi:
Radiation damages of polycrystalline silicon films and npn Si transistors by high-energy particle irradiation. 1443-1448 - Bernd Ebersberger, Alexander Olbrich, Christian Boit:
Application of Scanning Probe Microscopy techniques in Semiconductor Failure Analysis. 1449-1458 - H. Yabuhara, Mauro Ciappa, Wolfgang Fichtner:
Diamond-Coated Cantilevers for Scanning Capacitance Microscopy Applications. 1459-1463 - James C. Tsang, Massimo V. Fischetti:
Why hot carrier emission based timing probes will work for 50 nm, 1V CMOS technologies. 1465-1470 - Dean Lewis, Vincent Pouget, Thomas Beauchêne, Hervé Lapuyade, Pascal Fouillat, André Touboul, Felix Beaudoin, Philippe Perdu:
Front Side and Backside OBIT Mappings applied to Single Event Transient Testing. 1471-1476 - Felix Beaudoin, X. Chauffleur, Jean-Pierre Fradin, Philippe Perdu, Romain Desplats, Dean Lewis:
Modeling Thermal Laser Stimulation. 1477-1482 - C.-C. Tsao, Q. S. Wang, P. Bouchet, P. Sudraud:
Coaxial Ion-Photon System. 1483-1488 - Katsuyoshi Miura, Koji Nakamae, Hiromu Fujioka:
Development of an EB/FIB Integrated Test System. 1489-1494 - Romain Desplats, Philippe Perdu, Felix Beaudoin:
A New Versatile Testing Interface for Failure Analysis in Integrated Circuits. 1495-1499 - Sergey Bychikhin, Martin Litzenberger, R. Pichler, Dionyz Pogany, Erich Gornik, Gerhard Groos, Matthias Stecher:
Thermal and free carrier laser interferometric mapping and failure analysis of anti-serial smart power ESD protection structures. 1501-1506 - Norman Goldblatt, Martin Leibowitz, William Lo:
Unique and Practical IC Timing Analysis Tool Utilizing Intrinsic Photon Emission. 1507-1512 - Vincent Pouget, Hervé Lapuyade, Pascal Fouillat, Dean Lewis, S. Buchner:
Theoretical Investigation of an Equivalent Laser LET. 1513-1518 - M. Zmeck, J. C. H. Phang, Andrew Bettiol, T. Osipowicz, F. Watt, L. J. Balk, Franz-Josef Niedernostheide, Hans-Joachim Schulze, E. Falck, R. Barthelmess:
Analysis of high-power devices using proton beam induced charge microscopy. 1519-1524 - Kazuko Ikeda:
Evaluation method for the control of process induced defect in deep sub-micron device fabrication. 1525-1533 - Markus Leicht, G. Fritzer, B. Basnar, S. Golka, Jürgen Smoliner:
A reliable course of Scanning Capacitance Microscopy analysis applied for 2D-Dopant Profilings of Power MOSFET Devices. 1535-1537 - Romain Desplats, Felix Beaudoin, Philippe Perdu, Patrick Poirier, David Trémouilles, Marise Bafleur, Dean Lewis:
Backside Localization of Current Leakage Faults Using Thermal Laser Stimulation. 1539-1544 - Ted R. Lundquist, E. Delenia, J. Harroun, E. LeRoy, Chun-Cheng Tsao:
Ultra-Thinning of C4 Integrated Circuits for Backside Analysis during First Silicon Debug. 1545-1549 - Jon C. Lee, David Su, J. H. Chuang:
A Novel Application of the FIB Lift-out Technique for 3-D TEM Analysis. 1551-1556 - Felix Beaudoin, Philippe Perdu, Romain Desplats, Sebastien Rigo, Dean Lewis:
Silicon Thinning and Polishing on Packaged Devices. 1557-1561 - A. Scavennec:
Introduction of InP high speed electronics into optical fiber transmission systems and current technological limits. 1563-1566 - Cezary Sydlo, Bastian Mottet, Husin Ganis, Hans L. Hartnagel, Viktor Krozer, Sylvain L. Delage, Simone Cassette, Eric Chartier, D. Floriot, Steven Bland:
Defect detection and modelling using pulsed electrical stress for reliability investigations of InGaP HBT. 1567-1571 - Benoit Lambert, Nathalie Malbert, Nathalie Labat, Frédéric Verdier, André Touboul, P. Huguet, R. Bonnet, G. Pataut:
Evolution of LF noise in Power PHEMT's submitted to RF and DC Step Stresses. 1573-1578 - Gaudenzio Meneghesso, Gaudenzio Chini, Enrico Zanoni:
Long Term Stability of InGaAs/AlInAs/GaAs Methamorphic HEMTs. 1579-1584 - Mattia Borgarino, Giovanna Sozzi, Andrea Mazzanti, Giovanni Verzellesi:
Gate-lag effects in AlGaAs/GaAs power HFET's. 1585-1589 - R. Petersen, Ward De Ceuninck, Luc De Schepper, Olivier Vendier, Hervé Blanck, Dominique Pons:
Determination of the thermal resistance and current exponent of heterojunction bipolar transistors for reliability evaluation. 1591-1596 - Stefan Dilhaire, Stéphane Grauby, Sébastien Jorez, Luis David Patiño Lopez, Emmanuel Schaub, Wilfrid Claeys:
Laser diode COFD analysis by thermoreflectance microscopy. 1597-1601 - Paola Furcas, Rosaria De Palo, Maria Elena Patella, Giulia Salmini, Massimo Vanzi:
Damp Heat test on LiNbO optical modulators. 1603-1607 - Gaudenzio Meneghesso, Simona Podda, Massimo Vanzi:
Investigation on ESD-stressed GaN/InGaN-on-sapphire blue LEDs. 1609-1614 - Michael W. Lane, Jeffrey M. Snodgrass, Reinhold H. Dauskardt:
Environmental Effects on Interfacial Adhesion. 1615-1624 - David Dalleau, Kirsten Weide-Zaage:
Three-Dimensional Voids Simulation in chip Metallization Structures: a Contribution to Reliability Evaluation. 1625-1630 - Valeriy Sukharev, Ben P. Shieh, Ratan K. Choudhury, Chong W. Park, Krishna C. Saraswat:
Reliability Studies on Multilevel Interconnection with Intermetal Dielectric Air Gaps. 1631-1635 - Alan Mathewson, Carlos Montes de Oca, Sean Foley:
Thermomechanical stress analysis of Cu/low-k dielectric interconnect schemes. 1637-1641 - Risto Rautioaho, Olli Nousiainen, Seppo Leppävuori, Jaakko Lenkkeri, Tuomo Jaakola:
Thermal fatigue in solder joints of Ag-Pd and Ag-Pt metallized LTCC modules. 1643-1648 - Claude Drevon:
RF Packaging for Space Applications: from Micropackage to SOP - "System On a Package". 1649-1656 - Ulrich Wagner, J. Franz, M. Schweiker, Winfried Bernhard, Roland Müller-Fiedler, Bernd Michel, Oliver Paul:
Mechanical Reliability of MEMS-structures under shock load. 1657-1662 - Guy Lefranc, Gerhard Mitic, H.-J. Schultz:
Thermal management and reliability of multi-chip power modules. 1663-1669 - J. M. Bosc:
Integrated power transistor size optimisation. 1671-1676 - Stéphane Forster, Thierry Lequeu, Robert Jérisian:
Operation of power semiconductors under transient thermal conditions: thermal fatigue reliability and mechanical aspects. 1677-1682 - Luca Sponton, Lorenzo Cerati, Giuseppe Croce, Francesco Chrappan, Claudio Contiero, Gaudenzio Meneghesso, Enrico Zanoni:
ESD protection structures for BCD5 smart power technologies. 1683-1687 - Reinhard Schlegel, E. Herr, F. Richter:
Reliability of non-hermetic pressure contact IGBT modules. 1689-1694 - Gerard Coquery, S. Carubelli, Jean-Pierre Ousten, Richard Lallemand, Frederic Lecoq, Dominique Lhotellier, V. de Viry, Philippe Dupuy:
Power module lifetime estimation from chip temperature direct measurement in an automotive traction inverter. 1695-1700 - G. Simon, G. Guffroy:
A pragmatic methodology for the monitoring of the electronic components ageing: The case of power thyristors at EDF. 1701-1705 - Yannick Rey-Tauriac, M. Taurin, Olivier Bonnaud:
High reliability power VDMOS Transistors in Bipolar/CMOS/DMOS technology. 1707-1712 - Uwe Scheuermann, E. Herr:
A Novel Power Module Design and Technology for Improved Power Cycling Capability. 1713-1718 - M. Thoben, X. Xie, D. Silber, Jürgen Wilde:
Reliability of Chip/DCB Solder Joints in AlSiC Base Plate Power Modules: Influence of Chip Size. 1719-1723 - Giovanni Busatto, Francesco Iannuzzo, Francesco Velardi, Jeffery Wyss:
Non-destructive tester for single event burnout of power diodes. 1725-1729 - Stephane Azzopardi, Atsuo Kawamura, Hideo Iwamoto, Olivier Briat, Jean-Michel Vinassa, Eric Woirgard, Christian Zardini:
Local lifetime control IGBT structures: turn-off performances comparison for hard- and soft-switching between 1200V trench and new planar PT-IGBTs. 1731-1736
Volume 41, Number 11, November 2001
- Markus P. J. Mergens:
Foreword - On-Chip ESD. 1737 - Koen G. Verhaege, Christian C. Russ:
Novel fully silicided ballasting and MFT design techniques for ESD protection in advanced deep sub-micron CMOS technologies. 1739-1749 - James W. Miller, Michael G. Khazhinsky, James C. Weldon:
Layout and bias options for maximizing Vt1 in cascoded NMOS output buffers. 1751-1760 - Kai Esmark, Wolfgang Stadler, M. Wendel, Harald Gossner, X. Guggenmos, Wolfgang Fichtner:
Advanced 2D/3D ESD device simulation - a powerful tool already used in a pre-Si phase. 1761-1770 - Jie Wu, Patrick Juliano, Elyse Rosenbaum:
Breakdown and latent damage of ultra-thin gate oxides under ESD stress conditions. 1771-1779 - Yu Wang, Patrick Juliano, Sopan Joshi, Elyse Rosenbaum:
Electrothermal model for simulation of bulk-Si and SOI diodes in ESD protection circuits. 1781-1787 - Leo G. Henry, Mark A. Kelly, Tom Diep, Jon Barth:
The importance of standardizing CDM ESD test head parameters to obtain data correlation. 1789-1800 - Franco Stellari, Franco Zappa, Sergio Cova, L. Vendrame:
Tools for contactless testing and simulation of CMOS circuits. 1801-1808 - Fernanda Irrera:
Electrical degradation and recovery of dielectrics in n++-poly-Si/SiOx/SiO2/p-sub structures designed for application in low-voltage non-volatile memories. 1809-1813 - F. A. Stam, E. Davitt:
Effects of thermomechanical cycling on lead and lead-free (SnPb and SnAgCu) surface mount solder joints. 1815-1822 - Kendall D. Hester, Matthew P. Koehler, Hanna Kanciak-Chwialkowski, Brian H. Jones:
An assessment of the value of added screening of electronic components for commercial aerospace applications. 1823-1828 - Dominique Wojciechowski, Moses Chan, Fabrizio Martone:
Lead-free plastic area array BGAs and polymer stud grid arraysTM package reliability. 1829-1839 - Xiaohui Tang, Xavier Baie, Jean-Pierre Colinge, Pierre Loumaye, Christian Renaux, Vincent Bayot:
Influence of device geometry on SOI single-hole transistor characteristics. 1841-1846 - Deborah M. Mechtel, Harry K. Charles Jr., Arthur S. Francomacaro:
The development of poled polyimide dielectric layers for simultaneous testing and light guiding applications in MCM-Ds. 1847-1855 - Mahamane Kader, Michel Lenczner, Zeljko Mrcarica:
Distributed control based on distributed electronic circuits: application to vibration control. 1857-1866 - Y. C. Chan, P. L. Tu, K. C. Hung:
Study of the self-alignment of no-flow underfill for micro-BGA assembly. 1867-1875 - Piotr Bratek, Andrzej Kos:
A method of thermal testing of microsystems. 1877-1887 - Bing-Yue Tsui, Tsung-Ju Yang, Tzu-Kun Ku:
Impact of interface nature on deep sub-micron Al-plug resistance. 1889-1896 - Kun-Wei Lin, Kuo-Hui Yu, Wen-Lung Chang, Chih-Kai Wang, Wen-Huei Chiou, Wen-Chau Liu:
On the InGaP/InxGa1-xAs pseudomorphic high electron-mobility transistors for high-temperature operations. 1897-1902 - Lingfeng Mao, Yao Yang, Jian-Lin Wei, Heqiu Zhang, Mingzhen Xu, Changhua Tan:
Effect of SiO2/Si interface roughness on gate current. 1903-1907 - Fuchen Mu, Mingzhen Xu, Changhua Tan, Xiaorong Duan:
A new lifetime prediction method for hot-carrier degradation in n-MOSFETs with ultrathin gate oxides under Vg=Vd. 1909-1913
Volume 41, Number 12, December 2001
- Alexander Ambatiello, Josef Deichler:
Low and high temperature device reliability investigations of buried p-channel MOSFETs of a 0.17 mum technology. 1915-1921 - Gennadi Bersuker, Yongjoo Jeon, Howard R. Huff:
Degradation of thin oxides during electrical stress. 1923-1931 - M. Da Rold, Eddy Simoen, Sofie Mertens, Marc Schaekers, G. Badenes, Stefaan Decoutere:
Impact of gate oxide nitridation process on 1/f noise in 0.18 mum CMOS. 1933-1938 - Zhenqiu Ning, Yuri Sneyders, Wim Vanderbauwhede, Renaud Gillon, Marnix Tack, Paul Raes:
A compact test structure for characterisation of leakage currents in sub-micron CMOS technologies. 1939-1945 - Z. Chobola:
Noise as a tool for non-destructive testing of single-crystal silicon solar cells. 1947-1952 - Jin He, Xing Zhang, Ru Huang, Yangyuan Wang:
Extraction of the lateral distribution of interface traps in MOSFETs by a novel combined gated-diode technique. 1953-1957 - B. P. Yan, Y. F. Yang, C. C. Hsu, H. B. Lo, E. S. Yang:
A reliability comparison of InGaP/GaAs HBTs with and without passivation ledge. 1959-1963 - Dmytro V. Fedasyuk, Evgenia Levus, D. Petrov:
Flip-chip structure transient thermal model. 1965-1970 - Piotr Dziurdzia, Andrzej Kos:
Monitoring of power dissipated in microelectronic structures. 1971-1978 - Xingsheng Liu, Shuangyan Xu, Guo-Quan Lu, David A. Dillard:
Stacked solder bumping technology for improved solder joint reliability. 1979-1992 - P. L. Tu, Y. C. Chan, K. C. Hung:
Reliability of microBGA assembly using no-flow underfill. 1993-2000 - Shyh-Ming Chang, Jwo-Huei Jou, Adam Hsieh, Tai-Hong Chen, Ching-Yun Chang, Yung-Hao Wang, Chun-Ming Huang:
Characteristic study of anisotropic-conductive film for chip-on-film packaging. 2001-2009 - W. D. Zhuang, P. C. Chang, F. Y. Chou, R. K. Shiue:
Effect of solder creep on the reliability of large area die attachment. 2011-2021 - Mykola Blyzniuk, Irena Kazymyra, Wieslaw Kuzmicz, Witold A. Pleskacz, Jaan Raik, Raimund Ubar:
Probabilistic analysis of CMOS physical defects in VLSI circuits for test coverage improvement. 2023-2040 - S. Dordevic, P. Petkovic:
A hierarchical approach to large circuit symbolic simulation. 2041-2049 - Robert I. Damper, Richard L. B. French, Tom W. Scutt:
The Hi-NOON neural simulator and its applications. 2051-2065 - Bharatwaj Ramakrishnan, Peter Sandborn, Michael G. Pecht:
Process capability indices and product reliability. 2067-2070 - M. C. Poon, Y. Gao, Ted Chi-Wah Kok, A. M. Myasnikov, Hei Wong:
SIMS study of silicon oxynitride prepared by oxidation of silicon-rich silicon nitride layer. 2071-2074
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