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ORCIDMicroelectronics Reliability, Volume 43
Volume 43, Number 1, January 2003
- Harry A. Schafft, Linda M. Head, Jason Gill, Timothy D. Sullivan:
Early reliability assessment by using deep censoring. 1-16 - Michael W. Ruprecht, Guenther Benstetter
, Douglas B. Hunt:
A review of ULSI failure analysis techniques for DRAMs. Part II: Defect isolation and visualization. 17-41 - C.-T. Wu, A. Mieckowski, R. S. Ridley, G. Dolny, T. Grebs, J. Linn, Jerzy Ruzyllo:
Effect of nitridation on the reliability of thick gate oxides. 43-47 - Emil V. Jelenkovic, K. Y. Tong, Wai Yuen Cheung, S. P. Wong:
Degradation of RuO2 thin films in hydrogen atmosphere at temperatures between 150 and 250 degreeC. 49-55 - N. A. Hastas, C. A. Dimitriadis, J. Brini, G. Kamarinos, V. K. Gueorguiev, S. Kaschieva:
Effects of gamma-ray irradiation on polycrystalline silicon thin-film transistors. 57-60 - Vladislav A. Vashchenko, Ann Concannon, Marcel ter Beek, P. Hopper:
LVTSCR structures for latch-up free ESD protection of BiCMOS RF circuits. 61-69 - David Trémouilles, Géraldine Bertrand, Marise Bafleur, Felix Beaudoin, Philippe Perdu, Nicolas Guitard, Lionel Lescouzères:
TCAD and SPICE modeling help solve ESD protection issues in analog CMOS technology. 71-79 - Paolo Cova, Roberto Menozzi, Marco Portesine:
Power p-i-n diodes for snubberless application: H+ irradiation for soft and reliable reverse recovery. 81-87 - Stéphane Forster, Thierry Lequeu, Robert Jérisian:
Degradation mechanism of power devices under di/dt thermal shocks: turn-on of a TRIAC in Q3. 89-98 - G. Romo, Tom J. Smy, David J. Walkey, B. Reid:
Modeling facet heating in ridge lasers. 99-110 - A. Cazarré, F. Lépinois, A. Marty, S. Pinel, J. Tasselli, J. P. Bailbé, J. R. Morante, F. Murray:
Electrical qualification of new ultrathin integration techniques. 111-115 - M. Karilahti:
Neural net analysis of integrated circuit yield dependence on CMOS process control parameters. 117-121 - Kuo-Ming Chen, Kuo-Ning Chiang:
Impact of probing procedure on flip chip reliability. 123-130 - Chi-Hui Chien, Yung-Chang Chen, Yii-Tay Chiou, Thaiping Chen, Chi-Chang Hsieh, Jia-Jin Yan, Wei-Zhi Chen, Yii-Der Wu:
Influences of the moisture absorption on PBGA package's warpage during IR reflow process. 131-139 - Harry K. Charles Jr., K. J. Mach, S. J. Lehtonen, Arthur S. Francomacaro, J. S. DeBoy, R. L. Edwards:
Wirebonding at higher ultrasonic frequencies: reliability and process implications. 141-153 - Thomas D. Moore, John L. Jarvis:
Thermomechanical deformation of a bimaterial plate--as applied to laminate IC assemblies. 155-162 - David C. T. Or, Pui-To Lai, Johnny K. O. Sin, Paul C. K. Kwok, Jing-Ping Xu:
Enhanced reliability for low-temperature gate dielectric of MOS devices by N2O or NO plasma nitridation. 163-166 - Roland Sorge:
Implant dose monitoring by MOS C-V measurement. 167-171 - Thomas Beauchêne, Dean Lewis, Felix Beaudoin, Vincent Pouget, Philippe Perdu, Pascal Fouillat, Yves Danto:
A physical approach on SCOBIC investigation in VLSI. 173-177
Volume 43, Number 2, February 2003
- H. E. Aldrete-Vidrio, J. L. del Valle, J. Santana-Corte:
A TCAD comparative study of power rectifiers: modified P-i-N vs. modified mosaic contact P-i-N diode. 181-188 - Magali Estrada, A. Afzalian, Denis Flandre, Antonio Cerdeira, Héctor Báez-Medina, A. de Lucca:
FD MOS SOI circuit to enhance the ratio of illuminated to dark current of a co-integrated a-Si: H photodiode. 189-193 - Roberto S. Murphy-Arteaga, Jesus Huerta-Chua, Alejandro Díaz-Sánchez, Alfonso Torres-Jácome, Wilfrido Calleja Arriaga, M. Landa-Vázquez:
Fabrication, characterisation and modelling of integrated on-silicon inductors. 195-201 - Javier Lemus-López, Alejandro Díaz-Sánchez, Jaime Ramírez-Angulo:
An analog median filter with fuzzy adaptation. 203-207 - Duarte Lopes de Oliveira, Marius Strum, Jiang Chau Wang, Wagner Chiepa Cunha:
Miriã: a CAD tool to synthesize multi-burst controllers for heterogeneous systems. 209-215 - Deni Torres, A. Redondo, M. E. Guzmán:
MSOH processor for STM-0/STS-1 to STM-4/STS-12: component of a SDH/SONET library. 217-223 - Sima Dimitrijev, Philippe Jamet:
Advances in SiC power MOSFET technology. 225-233 - M. Pecovska-Gjorgjevich, Nenad Novkovski, Elena Atanassova:
Electrical properties of thin RF sputtered Ta2O5 films after constant current stress. 235-241 - François Dieudonné, Sébastien Haendler, Jalal Jomaah, Francis Balestra:
Low frequency noise in 0.12 mum partially and fully depleted SOI technology. 243-248 - Paul Isaac Hagouel:
Blazed diffraction gratings fabricated using X-ray lithography: fabrication, modeling and simulation. 249-258 - K. S. Kim, S. H. Huh, K. Suganuma:
Effects of fourth alloying additive on microstructures and tensile properties of Sn-Ag-Cu alloy and joints with Cu. 259-267 - J. D. Wu, C. Y. Huang, C. C. Liao:
Fracture strength characterization and failure analysis of silicon dies. 269-277 - C. W. Tan, Y. C. Chan, N. H. Yeung:
Effect of autoclave test on anisotropic conductive joints. 279-285 - Ajit R. Dhamdhere, Ajay P. Malshe, William F. Schmidt, William D. Brown:
Investigation of reliability issues in high power laser diode bar packages. 287-295 - Paiboon Tangyunyong:
Thermal modeling of localized laser heating in multi-level interconnects. 297-305 - Bart Vandevelde, Dominiek Degryse, Eric Beyne, Eric Roose, Dorina Corlatan, Guido Swaelen, Geert Willems, Filip Christiaens, Alcatel Bell, Dirk Vandepitte:
Modified micro-macro thermo-mechanical modelling of ceramic ball grid array packages. 307-318 - Sasa A. Jankovic, Dejan M. Maksimovic:
Power saving modes in modern microcontroller design, diagnostics and reliability. 319-326 - M. M. Shahidul Hassan:
Base transit time of an epitaxial n+pn-n+ bipolar transistor considering Kirk effect. 327-332 - Sadegh Abbasian, Ebrahim Farjah:
A new drain current model for short-channel MOSFETs. 333-338 - Keiji Takagi:
A study on 1/f noise spectrum generation in nonlinear transmission media and biomedical systems. 339-342
Volume 43, Number 3, March 2003
- Andrzej Dziedzic:
Special Section on IMAPS-Europe 2002. 343 - Jürgen Wilde, Yuqing Lai:
Design optimization of an eddy current sensor using the finite-elements method. 345-349 - Arun Chandrasekhar, Steven Brebels, Serguei Stoukatch, Eric Beyne, Walter De Raedt, Bart Nauwelaers:
The influence of packaging materials on RF performance. 351-357 - Jürgen Schulz-Harder:
Advantages and new development of direct bonded copper substrates. 359-365 - Guo Lihui, Yu Mingbin, Foo Pang Dow:
RF inductors and capacitors integrated on silicon chip by CMOS compatible Cu interconnect technology. 367-370 - J. Müller, J. Klein, J. Rayho:
In-process verification of MLC substrates. 371-375 - Andrzej Dziedzic, Lars Rebenklau, Leszek J. Golonka, Klaus-Jürgen Wolter:
Fodel microresistors-processing and basic electrical properties. 377-383 - Kinam Kim, Yoon-Jong Song:
Integration technology for ferroelectric memory devices. 385-398 - Mansun Chan, Xuemei Xi, Jin He, Kanyu M. Cao, Mohan V. Dunga, Ali M. Niknejad, Ping K. Ko, Chenming Hu:
Practical compact modeling approaches and options for sub-0.1 mum CMOS technologies. 399-404 - Handoko Linewih, Sima Dimitrijev, Kuan Yew Cheong:
Channel-carrier mobility parameters for 4H SiC MOSFETs. 405-411 - Salvador Hidalgo, David Flores, Isabel Obieta, I. Mazarredo:
Passivation and packaging of positive bevelled edge termination and related electrical stability. 413-420 - Yang-Hua Chang, Chen-Chun Chang-Chiang, Yueh-Cheng Lee, Chi-Chung Liu:
Design of multi-finger HBTs with a thermal-electrical model. 421-426 - Vladislav A. Vashchenko, Ann Concannon, Marcel ter Beek, P. Hopper:
Quasi-3D simulation approach for comparative evaluation of triggering ESD protection structures. 427-437 - Thomas Beauchêne, Dean Lewis, Felix Beaudoin, Vincent Pouget, Romain Desplats, Pascal Fouillat, Philippe Perdu, Marise Bafleur, David Trémouilles:
Thermal laser stimulation and NB-OBIC techniques applied to ESD defect localization. 439-444 - Petteri Palm, Jarmo Määttänen, Yannick De Maquillé, Alain Picault, Jan Vanfleteren, Björn Vandecasteele:
Comparison of different flex materials in high density flip chip on flex applications. 445-451 - R. K. Shiue, L. W. Tsay, C. L. Lin, J. L. Ou:
The reliability study of selected Sn-Zn based lead-free solders on Au/Ni-P/Cu substrate. 453-463 - Yuko Sawada, Kozo Harada, Hirofumi Fujioka:
Study of package warp behavior for high-performance flip-chip BGA. 465-471 - Hirokazu Ezawa, Masaharu Seto, Masahiro Miyata, Hiroshi Tazawa:
Polymer film deposition with fine pitch openings by stencil printing. 473-479 - C. W. Tan, Y. C. Chan, N. H. Yeung:
Behaviour of anisotropic conductive joints under mechanical loading. 481-486 - Thomas D. Moore, John L. Jarvis:
A simple and fundamental design rule for resisting delamination in bimaterial structures. 487-494 - Wen Lea Pearn, Ming-Hung Shu:
An algorithm for calculating the lower confidence bounds of CPU and CPL with application to low-drop-out linear regulators. 495-502 - Takeshi Yanagisawa, Takeshi Kojima:
The stability of the CuInSe2 solar mini-module I-V characteristics under continuous and light/dark irradiation cycle tests. 503-507 - Gady Golan, Alex Axelevitch, B. Sigalov, B. Gorenstein:
Integrated thin film heater-thermocouple systems. 509-512 - Mile K. Stojcev:
Memory Design Techniques for Low Energy Embedded Systems; Alberto Macii, Luca Benini, Massimo Poncino. Kluwer Academic Publishers, Boston, USA, 2002. Hard cover, pp 144 plus XI, ISBN 0-7923-7690-0. 513 - Mile K. Stojcev:
A designer's guide to built-in self-test; Charles E. Stround. Kluwer Academic Publishers, Boston, 2002. Hardcover, pp 319, plus XVI, ISBN 1-4020-7050-0. 514-515 - Mile K. Stojcev:
Semiconductor Memories: Technologies, Testing and Reliability; Ashok K. Sharma. IEEE Press and Wiley Interscience, New York, 1997. Hardcover, pp 462, plus XII, ISBN 0-7803-1000-4. 515
Volume 43, Number 4, April 2003
- Vitezslav Benda:
The quest for optimum technology of power semiconductor devices. 517 - Noel Y. A. Shammas:
Present problems of power module packaging technology. 519-527 - Josef Lutz, Martin Domeij:
Dynamic avalanche and reliability of high voltage diodes. 529-536 - J. Vobecký, Pavel Hazdra, V. Záhlava:
Impact of the electron, proton and helium irradiation on the forward I-V characteristics of high-power P-i-N diode. 537-544 - M. Blaho, Dionyz Pogany, Erich Gornik, Marie Denison, Gerhard Groos, Matthias Stecher:
Study of internal behavior in a vertical DMOS transistor under short high current stress by an interferometric mapping method. 545-548 - Francesco Velardi, Francesco Iannuzzo, Giovanni Busatto, Jeffery Wyss, A. Candelori:
Experimental study of charge generation mechanisms in power MOSFETs due to energetic particle impact, . 549-555 - Václav Papez, B. Kojecký, J. Kozísek, J. Hejhal:
Transient effects on high voltage diode stack under reverse bias. 557-564 - B. Morillon, Jean-Marie Dilhac, Christian Ganibal, C. Anceau:
Study of aluminum thermomigration as a low thermal budget technique for innovative power devices. 565-569 - Adeline Feybesse, Ivana Deram, Jean-Michel Reynes, Eric Moreau:
Copper metallization influence on power MOS reliability. 571-576 - Giovanni Busatto, Roberto La Capruccia, Francesco Iannuzzo, Francesco Velardi, Roberto Roncella:
MAGFET based current sensing for power integrated circuit. 577-583 - Hei Wong:
Low-frequency noise study in electron devices: review and update. 585-599 - Minkyu Je, Jeonghu Han, Hyungcheol Shin, Kwyro Lee:
A simple four-terminal small-signal model of RF MOSFETs and its parameter extraction. 601-609 - Jackie Chan, Hei Wong, M. C. Poon, Chi-Wah Kok:
Oxynitride gate dielectric prepared by thermal oxidation of low-pressure chemical vapor deposition silicon-rich silicon nitride. 611-616 - S. K. Manhas, D. Chandra Sekhar, A. S. Oates, Merlyne M. De Souza:
Characterisation of series resistance degradation through charge pumping technique. 617-624 - Chunyan Yin, M. O. Alam, Yan Cheong Chan, Chris Bailey, Hua Lu:
The effect of reflow process on the contact resistance and reliability of anisotropic conductive film interconnection for flip chip on flex applications. 625-633 - C. Hillman, B. Castillo, Michael G. Pecht:
Diffusion and absorption of corrosive gases in electronic encapsulants. 635-643 - Pekka Heino, Eero Ristolainen:
Strength of Ta-Si interfaces by molecular dynamics. 645-650 - Wen Lea Pearn, G. H. Lin:
A reliable procedure for testing linear regulators with one-sided specification limits based on multiple samples. 651-664 - V. A. Gritsenko, A. V. Shaposhnikov, Yu. N. Novikov, A. P. Baraban, Hei Wong, G. M. Zhidomirov, M. Roger:
Onefold coordinated oxygen atom: an electron trap in the silicon oxide. 665-669 - N. A. Hastas, C. A. Dimitriadis, F. V. Farmakis, G. Kamarinos:
Effects of hydrogenation on the performance and stability of p-channel polycrystalline silicon thin-film transistors. 671-674 - Z. Synowiec, B. Paszkiewicz:
Electron transport in implant isolation GaAs layers. 675-679 - Johan Liu:
Foldable Flex and Thinned Silicon Chips for Multichip Packaging; John Balde (Ed.), Kluwer Academic Publishers, Boston, USA, December 2002. Hardbound, 340 pp, Number of figures and tables 200, ISBN 0-7923-7676-5. 681-683 - Mile K. Stojcev:
System Design with System C; Thorsten Grotker, Stan Liao, Grant Martin, Stuart Swan. Kluwer Academic Publishers, Boston, 2002. Hardcover, pp 217, plus X, ISBN 1-4020-7027-1. 683-684
Volume 43, Number 5, May 2003
- Mark Zwolinski, Manoj Singh Gaur:
Integrating testability with design space exploration. 685-693 - Reza Ghaffarian:
Qualification approaches and thermal cycle test results for CSP/BGA/FCBGA. 695-706 - Ru Huang, Jinyan Wang, Jin He, Min Yu, Xing Zhang, Yangyuan Wang:
Hot carrier degradation behavior in SOI dynamic-threshold-voltage nMOSFET's (n-DTMOSFET) measured by gated-diode configuration. 707-711 - Summer F. C. Tseng, Wei-Ting Kary Chien, Bing-Chu Cai:
Improvement of poly-silicon hole induced gate oxide failure by silicon rich oxidation. 713-724 - Xiaofang Gao, Juin J. Liou, Joe Bernier, Gregg D. Croft, Waisum Wong, Satya Vishwanathan:
Optimization of on-chip ESD protection structures for minimal parasitic capacitance. 725-733 - Chihoon Lee, Donggun Park, Hyeong Joon Kim, Wonshik Lee:
Electrical reliability of highly reliable 256M-bit mobile DRAM with top-edge round STI and dual gate oxide. 735-739 - Tong Yan Tee, Chek Lim Kho, Daniel Yap, Carol Toh, Xavier Baraton, Zhaowei Zhong:
Reliability assessment and hygroswelling modeling of FCBGA with no-flow underfill. 741-749 - Qian Wang, Naoe Hosoda, Toshihiro Itoh, Tadatomo Suga:
Reliability of Au bump-Cu direct interconnections fabricated by means of surface activated bonding method. 751-756 - Kyung-Seob Kim, C. H. Yu, Nam-Hoon Kim, N. K. Kim, H. J. Chang, E. G. Chang:
Isothermal aging characteristics of Sn-Pb micro solder bumps. 757-763 - W. D. van Driel, G. Q. Zhang, J. H. J. Janssen, Leo J. Ernst, Fei Su, Kerm Sin Chian, Sung Yi:
Prediction and verification of process induced warpage of electronic packages. 765-774 - Ping Zhao, Michael G. Pecht:
Field failure due to creep corrosion on components with palladium pre-plated leadframes. 775-783 - Sam Z. Zhao:
Thermal design of a broadband communication system with detailed modeling of TBGA packages. 785-793 - Vencislav C. Valchev, Alex Van den Bossche:
Accurate natural convection modelling for magnetic components. 795-802 - T. Y. Lin, K. L. Davison, W. S. Leong, Simon Chua, Y. F. Yao, J. S. Pan, J. W. Chai, K. C. Toh, W. C. Tjiu:
Surface topographical characterization of silver-plated film on the wedge bondability of leaded IC packages. 803-809 - T. Y. Lin, C. M. Fang, Y. F. Yao, K. H. Chua:
Development of the green plastic encapsulation for high density wirebonded leaded packages. 811-817 - Mile K. Stojcev:
High Performance Memory Testing: Design Principles, Fault Modeling and Self-Test; R. Dean Adams, Kluwer Academic Publishers, Boston, 2003, Hardcover, pp 247, plus XIII, ISBN 1-4020-7255-4. 819
Volume 43, Number 6, June 2003
- Wallace T. Anderson, Roberto Menozzi:
Editorial. 821 - Hyungtak Kim, Alexei Vertiatchikh, Richard M. Thompson, Vinayak Tilak, Thomas R. Prunty, James R. Shealy, Lester F. Eastman:
Hot electron induced degradation of undoped AlGaN/GaN HFETs. 823-827 - Frank Gao:
High reliability in PHEMT MMICs with dual-etch-stop AlAs layers for high-speed RF switch applications. 829-837 - Frank Brunner, A. Braun, Paul Kurpas, J. Schneider, Joachim Würfl, Markus Weyers:
Investigation of short-term current gain stability of GaInP/GaAs-HBTs grown by MOVPE. 839-844 - William J. Rowe, Bruce M. Paine, Adele E. Schmitz, Robert H. Walden, Michael J. Delaney:
Reliability of 100 nm silicon nitride capacitors in an InP HEMT MMIC process. 845-851 - Bruce M. Paine, Ami P. Shah, Thomas Rust:
The effects of ternary alloys on thermal resistances of HBTs, HEMTs, and laser diodes. 853-858 - Charles S. Whitman:
Accelerated life test calculations using the method of maximum likelihood: an improvement over least squares. 859-864 - Rolf-Peter Vollertsen:
Thin dielectric reliability assessment for DRAM technology with deep trench storage node. 865-878 - John J. H. Reche, Deok-Hoon Kim:
Wafer level packaging having bump-on-polymer structure. 879-894 - Julio C. Tinoco, Magali Estrada, G. Romero:
Room temperature plasma oxidation mechanism to obtain ultrathin silicon oxide and titanium oxide layers. 895-903 - Ivanka P. Stanimirovic, Milan Jevtic, Zdravko I. Stanimirovic:
High-voltage pulse stressing of thick-film resistors and noise. 905-911 - Hong Meng Ho, Wai Lam, Serguei Stoukatch, Petar Ratchev, Charles J. Vath, Eric Beyne:
Direct gold and copper wires bonding on copper. 913-923 - Po-Jen Zheng, J. Z. Lee, K. H. Liu, J. D. Wu, S. C. Hung:
Solder joint reliability of TFBGA assemblies with fresh and reworked solder balls. 925-934 - D. S. Liu, Y. C. Chao, C. H. Lin, G. S. Shen, H. S. Liu:
Numerical study on the bonding tool position, tip profile and planarity angle influences on TAB/ILB interconnection reliability. 935-943 - Dominik Kasprowicz, Witold A. Pleskacz:
Improvement of integrated circuit testing reliability by using the defect based approach. 945-953 - Belén Calvo, Santiago Celma, Pedro A. Martínez, Maria Teresa Sanz:
Novel high performance CMOS current conveyor. 955-961 - Wen Lea Pearn, Ming-Hung Shu:
Manufacturing capability control for multiple power-distribution switch processes based on modified Cpk MPPAC. 963-975 - Takeshi Yanagisawa, Takeshi Kojima:
Degradation of InGaN blue light-emitting diodes under continuous and low-speed pulse operations. 977-980 - Ali Behcet Alpat, Roberto Battiston, Marco Bizzarri, Diego Caraffini, E. Fiori, A. Papi, Marco Petasecca, A. Pontetti:
The radiation sensitivity mapping of ICs using an IR pulsed laser system. 981-984
Volume 43, Number 7, July 2003
- Horst A. Gieser:
On-chip electrostatic discharge ESD. 985-986 - Steven S. Poon, Timothy J. Maloney:
New considerations for MOSFET power clamps. 987-991 - Markus P. J. Mergens, Christian C. Russ, Koen G. Verhaege, John Armer, Phillip Jozwiak, Russ Mohn:
High holding current SCRs (HHI-SCR) for ESD protection and latch-up immune IC operation. 993-1000 - Martin Streibl, Kai Esmark, A. Sieck, Wolfgang Stadler, M. Wendel, J. Szatkowski, Harald Gossner:
Harnessing the base-pushout effect for ESD protection in bipolar and BiCMOS technologies. 1001-1010 - Vesselin K. Vassilev, Snezana Jenei, Guido Groeseneken, Rafael Venegas, Steven Thijs, Vincent De Heyn, M. Natarajan Iyer, Michiel Steyaert, Herman E. Maes:
High frequency characterization and modelling of the parasitic RC performance of two terminal ESD CMOS protection devices. 1011-1020 - Sopan Joshi, Elyse Rosenbaum:
Simulator-independent compact modeling of vertical npn transistors for ESD and RF circuit simulation. 1021-1027 - Boris Lisenker:
Process influence on product CDM ESD performance. 1029-1037 - Sherry Suat Cheng Khoo, Pee Ya Tan, Steven H. Voldman:
Microanalysis and electromigration reliability performance of high current transmission line pulse (TLP) stressed copper interconnects. 1039-1045 - Ingrid De Wolf:
MEMS reliability. 1047-1048 - W. Merlijn van Spengen:
MEMS reliability from a failure mechanisms perspective. 1049-1060 - Xavier Lafontan, Francis Pressecq, Felix Beaudoin, Sebastien Rigo, M. Dardalhon, J.-L. Roux, Petra Schmitt, J. Kuchenbecker, B. Baradat, Djemel Lellouchi:
The advent of MEMS in space. 1061-1083 - Roland Müller-Fiedler, Volker Knoblauch:
Reliability aspects of microsensors and micromechatronic actuators for automotive applications. 1085-1097 - Alex Dommann, A. Enzler, N. Onda:
Advanced X-ray analysis techniques to investigate aging of micromachined silicon actuators for space application. 1099-1103 - X. Q. Shi, Z. P. Wang, J. P. Pickering:
A new methodology for the characterization of fracture toughness of filled epoxy films involved in microelectronics packages. 1105-1115 - Tong Yan Tee, Hun Shen Ng, Daniel Yap, Xavier Baraton, Zhaowei Zhong:
Board level solder joint reliability modeling and testing of TFBGA packages for telecommunication applications. 1117-1123 - Yannick Deshayes, Laurent Béchou, Jean-Yves Delétage, Frédéric Verdier, Yves Danto, Dominique Laffitte, Jean-Luc Goudard:
Three-dimensional FEM simulations of thermomechanical stresses in 1.55 mum Laser modules. 1125-1136 - Jean-Yves Delétage, F. J.-M. Verdier, Bernard Plano, Yannick Deshayes, Laurent Béchou, Yves Danto:
Reliability estimation of BGA and CSP assemblies using degradation law model and technological parameters deviations. 1137-1144 - Mamidala Jagadesh Kumar, Linga Reddy Cenkeramaddi:
2D-simulation and analysis of lateral SiC N-emitter SiGe P-base Schottky metal-collector (NPM) HBT on SOI. 1145-1149 - Xiang-Ti Meng, Ai-Guo Kang, Ji-Hong Li, Hai-Yun Zhang, Shi-Jie Yu, Zheng You:
Effects of electron and gamma-ray irradiation on CMOS analog image sensors. 1151-1155 - Timo Liukkonen, Aulis Tuominen:
Decreasing variation in paste printing using statistical process control. 1157-1161 - Haifeng Zhou, Zhenghui Lin, Wei Cao:
ILP method for memory mapping in high-level synthesis. 1163-1167 - Thomas D. Moore, John L. Jarvis:
Erratum to "A simple and fundamental design rule for resisting delamination in bimaterial structures" [Microelectronics Reliability 2003;43: 487-494]. 1169 - Mile K. Stojcev:
Rohit Kapur, CTL for Test Information of Digital ICs Hardcover. Kluwer Academic Publisher, Boston, 2003. pp 173, plus XI, ISBN 1-4020-7293-7. 1171-1172
Volume 43, Number 8, August 2003
- Gérard Ghibaudo, E. Vincent:
Guest Editorial. 1173 - Ernest Y. Wu, Jordi Suñé, Wing L. Lai, Alex Vayshenker, Edward J. Nowak, David L. Harmon:
Critical reliability challenges in scaling SiO2-based dielectric to its limit. 1175-1184 - Jordi Suñé, Ernest Y. Wu, David Jiménez, Wing L. Lai:
Statistics of soft and hard breakdown in thin SiO2 gate oxides. 1185-1192 - James H. Stathis, Rosana Rodríguez, Barry P. Linder:
Circuit implications of gate oxide breakdown. 1193-1197 - Frederic Monsieur, E. Vincent, Vincent Huard, S. Bruyère, David Roy, Thomas Skotnicki, G. Pananakakis, Gérard Ghibaudo:
On the role of holes in oxide breakdown mechanism in inverted nMOSFETs. 1199-1202 - Marc Porti, S. Meli, Montserrat Nafría, Xavier Aymerich:
Pre-breakdown noise in electrically stressed thin SiO2 layers of MOS devices observed with C-AFM. 1203-1209 - G. Ribes, S. Bruyère, Frederic Monsieur, David Roy, Vincent Huard:
New insights into the change of voltage acceleration and temperature activation of oxide breakdown. 1211-1214 - Andreas Martin, Jochen von Hagen, Glenn B. Alers:
Ramped current stress for fast and reliable wafer level reliability monitoring of thin gate oxide reliability. 1215-1220 - G. Ghidini, A. Garavaglia, G. Giusto, Andrea Ghetti, R. Bottini, D. Peschiaroli, M. Scaravaggi, F. Cazzaniga, Daniele Ielmini:
Impact of gate stack process on conduction and reliability of 0.18 mum PMOSFET. 1221-1227 - Andrea Ghetti, D. Brazzelli, A. Benvenuti, G. Ghidini, Alessia Pavan:
Anomalous gate oxide conduction on isolation edges: analysis and process optimization. 1229-1235 - C. Besset, S. Bruyère, S. Blonkowski, S. Crémer, E. Vincent:
MIM capacitance variation under electrical stress. 1237-1240 - Alain Bravaix, C. Trapes, Didier Goguenheim, Nathalie Revil, E. Vincent:
Carrier injection efficiency for the reliability study of 3.5-1.2 nm thick gate-oxide CMOS technologies. 1241-1246 - S. Cimino, Andrea Cester, Alessandro Paccagnella, G. Ghidini:
Ionising radiation effects on MOSFET drain current. 1247-1251 - Albena Paskaleva, Martin Lemberger, Stefan Zürcher, Anton J. Bauer, Lothar Frey, Heiner Ryssel:
Electrical characterization of zirconium silicate films obtained from novel MOCVD precursors. 1253-1257 - F. Mondon, S. Blonkowski:
Electrical characterisation and reliability of HfO2 and Al2O3-HfO2 MIM capacitors. 1259-1266 - Kenji Takahashi, Mitsuo Umemoto, Naotaka Tanaka, Kazumasa Tanida, Yoshihiko Nemoto, Yoshihiro Tomita, Masamoto Tago, Manabu Bonkohara:
Ultra-high-density interconnection technology of three-dimensional packaging. 1267-1279 - Rodolfo Zolá García-Lozano, Magali Estrada, Antonio Cerdeira:
Effects of impurity concentration, hydrogen plasma process and crystallization temperature on poly-crystalline films obtained from PECVD a-Si: H layers. 1281-1287 - K. L. Ng, Nian Zhan, Chi-Wah Kok, M. C. Poon, Hei Wong:
Electrical characterization of the hafnium oxide prepared by direct sputtering of Hf in oxygen with rapid thermal annealing. 1289-1293 - I-Cheng Lin, Chih-Yao Huang, Chuan-Jane Chao, Ming-Dou Ker:
Anomalous latchup failure induced by on-chip ESD protection circuit in a high-voltage CMOS IC product. 1295-1301 - J. H. Zhang, Yan Cheong Chan, M. O. Alam, S. Fu:
Contact resistance and adhesion performance of ACF interconnections to aluminum metallization. 1303-1310 - Y. S. Zheng, Y. J. Su, B. Yu, P. D. Foo:
Investigation of defect on copper bond pad surface in copper/low k process integration. 1311-1316 - N. Duan, J. Scheer, J. Bielen, M. van Kleef:
The influence of Sn-Cu-Ni(Au) and Sn-Au intermetallic compounds on the solder joint reliability of flip chips on low temperature co-fired ceramic substrates. 1317-1327 - Tong Yan Tee, Hun Shen Ng, Daniel Yap, Zhaowei Zhong:
Comprehensive board-level solder joint reliability modeling and testing of QFN and PowerQFN packages. 1329-1338 - Li-Rong Zheng, Johan Liu:
System-on-package: a broad perspective from system design to technology development. 1339-1348 - Wen Lea Pearn, Ming-Hung Shu:
Erratum to "An algorithm for calculating the lower confidence bounds of CPU and CPL with application to low-drop-out linear regulators" [Microelectronics Reliability 2003;43: 495-502]. 1349
Volume 43, Numbers 9-11, September - November 2003
- Nathalie Labat, André Touboul:
Editorial. 1351-1352 - James H. Stathis, Barry P. Linder, Rosana Rodríguez, Salvatore Lombardo:
Reliability of ultra-thin oxides in CMOS circuits. 1353-1360 - D. Dufourt, J. L. Pelloie:
SOI design challenges. 1361-1367 - Lawrence C. Wagner:
Trends in Failure Analysis. 1369-1375 - A. Andreini, C. Neva, L. Renard, G. Sironi, F. Speroni, Luca Sponton, F. Tampellini, R. Tiziani:
Pad Over Active (POA) solutions for three metal level BCD5 mixed power process - Design and validation of ESD protections. 1377-1382 - Thomas Nirschl, M. Ostermayr, A. Olbrich, D. Vietzke, M. Omer, Carsten Linnenbank, U. Schaper, Y. Pottgiesser, J. Pottgiesser, M. Johansson:
MALTY--A memory test structure for analysis in the early phase of the technology development. 1383-1387 - G. Aichmayr:
Correlation of gate oxide reliability and product tests on leading edge DRAM technology. 1389-1393 - A. Aal:
A procedure for reliability control and optimization of mixed-signal smart power CMOS pocesses. 1395-1400 - P. Charpenel, F. Davenel, R. Digout, M. Giraudeau, M. Glade, J. P. Guerveno, N. Guillet, A. Lauriac, S. Male, D. Manteigas:
The right way to assess electronic system reliability: FIDES. 1401-1404 - Yong-Ha Song, S. G. Kim, S. B. Lee, K. J. Rhee, T. S. Kim:
A study of considering the reliability issues on ASIC/Memory integration by SIP (System-in-Package) technology. 1405-1410 - G. Cassanelli, Fausto Fantini, G. Serra, S. Sgatti:
Reliability in automotive electronics: a case study applied to diesel engine control. 1411-1416 - Gerald Lucovsky:
Electronic structure of transition metal/rare earth alternative high-K gate dielectrics: interfacial band alignments and intrinsic defects. 1417-1426 - Jong Tae Park, Nag Jong Choi, Chong-Gun Yu, Seok Hee Jeon, Jean-Pierre Colinge:
Increased hot carrier effects in Gate-All-Around SOI nMOSFET's. 1427-1432 - M. Fadlallah, C. Petit, A. Meinertzhagen, Gérard Ghibaudo, M. Bidaud, O. Simonetti, F. Guyader:
Influence of nitradation in ultra-thin oxide on the gate current degradation of N and PMOS devices. 1433-1438 - Rosana Rodríguez, James H. Stathis, Barry P. Linder, Rajiv V. Joshi, Ching-Te Chuang:
Influence and model of gate oxide breakdown on CMOS inverters. 1439-1444 - François Lime, Gérard Ghibaudo, B. Guillaumot:
Charge trapping in SiO2/HfO2/TiN gate stack. 1445-1448 - Yuan Li, Klaas Jelle Veenstra, Jérôme Dubois, Lei Peters-Wu, Agnes van Zomeren, Fred G. Kuper:
Reservoir effect and maximum allowed VIA misalignment for AlCu interconnect with tungsten VIA plug. 1449-1454 - Snezana Djoric-Veljkovic, Ivica Manic, Vojkan Davidovic, Snezana Golubovic, Ninoslav Stojadinovic:
Effects of burn-in stressing on post-irradiation annealing response of power VDMOSFETs. 1455-1460 - Young Pil Kim, U-In Chung, Joo Tae Moon, Sang U. Kim:
Electrical analysis of DRAM cell transistors for the root-cause addressing of the tRDL time-delay failure. 1461-1464 - Werner Frammelsberger, Guenther Benstetter, Thomas Schweinböck, Richard J. Stamp, Janice Kiely:
Characterization of thin and ultra-thin SiO2 films and SiO2/Si interfaces with combined conducting and topographic atomic force microscopy. 1465-1470 - Kin Leong Pey, C. H. Tung, M. K. Radhakrishnan, L. J. Tang, Y. Sun, X. D. Wang, W. H. Lin:
Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM. 1471-1476 - Se Re Na Yun, Won Sub Park, Byung Ha Lee, Jong Tae Park:
Hot electron induced punchthrough voltage of p-channel SOI MOSFET's at room and elevated temperatures. 1477-1482 - Stefano Aresu, Ward De Ceuninck, G. Knuyt, J. Mertens, Jean Manca, Luc De Schepper, Robin Degraeve, Ben Kaczer, Marc D'Olieslaeger, Jan D'Haen:
A new method for the analysis of high-resolution SILC data. 1483-1488 - Damien Zander, F. Saigné, A. Meinertzhagen, Christian Petit:
Contribution of oxide traps on defect creation and LVSILC conduction in ultra thin gate oxide devices. 1489-1493 - Andreas Gehring, Francisco Jimenez-Molinos, Hans Kosina, A. Palma, F. Gámiz, Siegfried Selberherr:
Modeling of retention time degradation due to inelastic trap-assisted tunneling in EEPROM devices. 1495-1500 - Marc Porti, Montserrat Nafría, Xavier Aymerich:
Oxide conductivity increase during the progressive-breakdown of SiO2 gate oxides observed with C-AFM. 1501-1505 - Joachim C. Reiner:
Pre-breakdown leakage current fluctuations of thin gate oxide. 1507-1512 - B. Mongellaz, François Marc, Yves Danto:
Ageing simulation of MOSFET circuit using a VHDL-AMS behavioural modelling: an experimental case study. 1513-1518 - D. Faure, D. Bru, C. Ali, C. Giret, K. Christensen:
Gate oxide breakdown characterization on 0.13mum CMOS technology. 1519-1523 - Jan Ackaert, Klara Bessemans, Eddy De Backer:
Charging induced damage by photoconduction through thick inter metal dielectrics. 1525-1529 - Hamid Toutah, Boubekeur Tala-Ighil, Jean-François Llibre, Bertrand Boudart, Taieb Mohammed-Brahim, Olivier Bonnaud:
Degradation in polysilicon thin film transistors related to the quality of the polysilicon material. 1531-1535 - S. Trinh, Markus P. J. Mergens, Koen G. Verhaege, Christian C. Russ, John Armer, Phillip Jozwiak, Bart Keppens, Russ Mohn, G. Taylor, Frederic De Ranter:
Multi-finger turn-on circuits and design techniques for enhanced ESD performance and width scaling. 1537-1543 - Masashi Hayashi, Shinji Nakano, Tetsuaki Wada:
Dependence of copper interconnect electromigration phenomenon on barrier metal materials. 1545-1550 - M. Zecri, P. Besse, Philippe Givelin, M. Nayrolles, Marise Bafleur, Nicolas Nolhier:
Determination of the ESD Failure Cause Through its Signature. 1551-1556 - Viktor Dubec, Sergey Bychikhin, M. Blaho, Dionyz Pogany, Erich Gornik, J. Willemen, Ning Qu, Wolfgang Wilkening, L. Zullino, A. Andreini:
A dual-beam Michelson interferometer for investigation of trigger dynamics in ESD protection devices under very fast TLP stress. 1557-1561 - Abdellatif Firiti, D. Faujour, Gérald Haller, J. M. Moragues, Vincent Goubier, Philippe Perdu, Felix Beaudoin, Dean Lewis:
Short defect characterization based on TCR parameter extraction. 1563-1568 - M. S. B. Sowariraj, Theo Smedes, Cora Salm, Ton J. Mouthaan, Fred G. Kuper:
Role of package parasitics and substrate resistance on the Charged Device Model (CDM) failure levels -An explanation and die protection strategy. 1569-1575 - Thomas Beauchêne, David Trémouilles, Dean Lewis, Philippe Perdu, Pascal Fouillat:
Characterization of ESD induced defects using Photovoltaic Laser Stimulation (PLS). 1577-1582 - Wen-Yu Lo, Ming-Dou Ker:
Analysis and Prevention on NC-ball induced ESD Damages in a 683-Pin BGA Packaged Chipset IC. 1583-1588 - Gaudenzio Meneghesso, N. Novembre, Enrico Zanoni, Luca Sponton, Lorenzo Cerati, Giuseppe Croce:
Optimization of ESD protection structures suitable for BCD6 smart power technology. 1589-1594 - J. C. H. Phang, D. S. H. Chan, V. K. S. Ong, S. Kolachina, J. M. Chin, M. Palaniappan, G. Gilfeather, Y. X. Seah:
Single contact beam induced current phenomenon for microelectronic failure analysis. 1595-1602 - Franco Stellari, Peilin Song, Moyra K. McManus, Alan J. Weger, Robert Gauthier, Kiran V. Chatty, Mujahid Muhammad, Pia N. Sanda, Philip Wu, Steve Wilson:
Latchup Analysis Using Emission Microscopy. 1603-1608 - Stefan Dilhaire, M. Amine Salhi, Stéphane Grauby, Wilfrid Claeys:
Laser Seebeck Effect Imaging (SEI) and Peltier Effect Imaging (PEI): complementary investigation methods. 1609-1613 - Frédéric Darracq, Hervé Lapuyade, Nadine Buard, Pascal Fouillat, R. Dufayel, Thierry Carrière:
Low-cost backside laser test method to pre-characterize the COTS IC's sensitivity to Single Event Effects. 1615-1619 - P. LeCoupanec, William K. Lo, Keneth R. Wilsher:
An ultra-low dark-count and jitter, superconducting, single-photon detector for emission timing analysis of integrated circuits. 1621-1626 - Katsuyoshi Miura, Tomoyuki Kobatake, Koji Nakamae, Hiromu Fujioka:
A low energy FIB processing, repair, and test system. 1627-1631 - Frank Seifert, Rainer Weber, Wolfgang Mertin, Erich Kubalek:
A new technique for contactless current contrast imaging of high frequency signals. 1633-1638 - Mustapha Remmach, Romain Desplats, Felix Beaudoin, E. Frances, Philippe Perdu, Dean Lewis:
Time Resolved Photoemission (PICA) - From the Physics to Practical Considerations. 1639-1644 - Hervé Deslandes, Ted R. Lundquist:
Limitations to photon-emission microscopy when applied to "hot" devices. 1645-1650 - Maria Stangoni, Mauro Ciappa, Wolfgang Fichtner:
A New Procedure to Define the Zero-Field Condition and to Delineate pn-Junctions in Silicon Devices by Scanning Capacitance Microscopy. 1651-1656 - Lee A. Knauss, Antonio Orozco, Solomon I. Woods, Alfred B. Cawthorne:
Advances in scanning SQUID microscopy for die-level and package-level fault isolation. 1657-1662 - Romain Desplats, A. Eral, Felix Beaudoin, Philippe Perdu, Alan J. Weger, Moyra K. McManus, Peilin Song, Franco Stellari:
Faster IC Analysis with PICA Spatial Temporal Photon Correlation and CAD Autochanneling. 1663-1668 - Alberto Tosi, Franco Stellari, Franco Zappa, Sergio Cova:
Backside Flip-Chip testing by means of high-bandwidth luminescence detection. 1669-1674 - B. Simmnacher, R. Weiland, J. Höhne, F. v. Feilitzsch, C. Hollerith:
Semiconductor material analysis based on microcalorimeter EDS. 1675-1680 - Felix Beaudoin, Romain Desplats, Philippe Perdu, Abdellatif Firiti, Gérald Haller, Vincent Pouget, Dean Lewis:
From Static Thermal and Photoelectric Laser Stimulation (TLS/PLS) to Dynamic Laser Testing. 1681-1686 - Jon C. Lee, J. H. Chuang:
A Novel Application of C-AFM: Deep Sub-micron Single Probing for IC Failure Analysis. 1687-1692 - Paul-Henri Albarède, S. Lavagne, C. Grosjean:
Strain investigation around shallow trench isolations : a LACBED Study. 1693-1698 - N. Lucarelli, M. Cavone, Michele Muschitiello, D. Centrone, F. Corsi:
Thermally Induced Voltage Alteration (TIVA) applied to ESD induced failures. 1699-1704 - Sylvain L. Delage, Christian Dua:
Wide band gap semiconductor reliability : Status and trends. 1705-1712 - Arnaud Curutchet, Nathalie Malbert, Nathalie Labat, André Touboul, Christophe Gaquière, A. Minko, Michael J. Uren:
Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates. 1713-1718 - J. Kuchenbecker, Mattia Borgarino, M. Zeuner, U. König, Robert Plana, Fausto Fantini:
High Electric Field Induced Degradation of the DC Characteristics in Si/SiGe HEMT's. 1719-1723 - J. C. Martin, Cristell Maneux, Nathalie Labat, André Touboul, Muriel Riet, S. Blayac, M. Kahn, Jean Godin:
1/f noise analysis of InP/InGaAs DHBTs submitted to bias and thermal stresses. 1725-1730 - Mohamed Belhaj, Cristell Maneux, Nathalie Labat, André Touboul, Philippe Bove:
High current effects in InP/GaAsSb/InP DHBT: Physical mechanisms and parasitic effects. 1731-1736 - Gaudenzio Meneghesso, S. Levada, Enrico Zanoni, Gaetano Scamarcio, Giovanna Mura, Simona Podda, Massimo Vanzi, S. Du, I. Eliashevich:
Reliability of visible GaN LEDs in plastic package. 1737-1742 - Laurent Mendizabal, Jean-Louis Verneuil, Laurent Béchou, Christelle Aupetit-Berthelemot, Yannick Deshayes, Frédéric Verdier, Jean-Michel Dumas, Yves Danto, Dominique Laffitte, Jean-Luc Goudard:
Impact of 1.55 mum laser diode degradation laws on fibre optic system performances using a system simulator. 1743-1749 - J. Van de Casteele, Dominique Laffitte, G. Gelly, C. Starck, M. Bettiati:
High reliability level demonstrated on 980nm laser diode. 1751-1754 - Kevin Sanchez, Romain Desplats, Guy Perez, V. Pichetto, Felix Beaudoin, Philippe Perdu:
Solar Cell Analysis with Light Emission and OBIC Techniques. 1755-1760 - C. Gautier, J. Périnet, E. Nissou, Dominique Laffitte:
New method of qualification applied to optical amplifier with electronics. 1761-1766 - Jean-Luc Goudard, X. Boddaert, J. Périnet, Dominique Laffitte:
Reliability of optoelectronics components: towards new qualification practices. 1767-1769 - Giovanna Mura, Massimo Vanzi, Maria Stangoni, Mauro Ciappa, Wolfgang Fichtner:
On the behaviour of the selective iodine-based gold etch for the failure analysis of aged optoelectronic devices. 1771-1776 - G. Q. Zhang:
The challenges of virtual prototyping and qualification for future microelectronics. 1777-1783 - Philippe Soussan, G. Lekens, R. Dreesen, Ward De Ceuninck, Eric Beyne:
Advantage of In-situ over Ex-situ techniques as reliability tool: Aging kinetics of Imec's MCM-D discrete passives devices. 1785-1790 - P. Tropea, Aïssa Mellal, John Botsis:
Deformation and damage of a solder-copper joint. 1791-1796 - Alton B. Horsfall, Joyce M. M. dos Santos, S. M. Soare, Nicholas G. Wright, A. G. O'Neill, S. J. Bull, Anthony J. Walton, Alan M. Gundlach, J. T. M. Stevenson:
Direct measurement of residual stress in integrated circuit interconnect features. 1797-1801 - G. Andriamonje, Vincent Pouget, Yves Ousten, Dean Lewis, Yves Danto, Jean-Michel Rampnoux, Younès Ezzahri, Stefan Dilhaire, Stéphane Grauby, Wilfrid Claeys:
Application of Picosecond Ultrasonics to Non-Destructive Analysis in VLSI circuits. 1803-1807 - Olivier Crépel, Romain Desplats, Y. Bouttement, Philippe Perdu, C. Goupil, Philippe Descamps, Felix Beaudoin, L. Marina:
Magnetic emission mapping for passive integrated components characterisation. 1809-1814 - P. Rajamand, Rainer Tilgner, Roland Schmidt, J. Baumann, P. Klofac, M. Rothenfusser:
Investigation of delaminations during thermal stress: scanning acoustic microscopy covering low and high temperatures. 1815-1820 - David Dalleau, Kirsten Weide-Zaage, Yves Danto:
Simulation of time depending void formation in copper, aluminum and tungsten plugged via structures. 1821-1826 - Michael Krüger, Jörg C. Krinke, K. Ritter, B. Zierle, M. Weber:
Laser-assisted decapsulation of plastic-encapsulated devices. 1827-1831 - Guy Lefranc, Brigitte Weiss, Christof Klos, J. Dick, Golta Khatibi, H. Berg:
Aluminum bond-wire properties after 1 billion mechanical cycles. 1833-1838 - Werner Kanert, H. Dettmer, Boris Plikat, Norbert Seliger:
Reliability aspects of semiconductor devices in high temperature applications. 1839-1846 - Francesco Velardi, Francesco Iannuzzo, Giovanni Busatto, Jeffery Wyss, Annunziata Sanseverino, A. Candelori, Giuseppe Currò, Alessandra Cascio, Ferruccio Frisina:
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment. 1847-1851 - Alexandrine Guédon, Eric Woirgard, Christian Zardini, Guillaume Simon:
Methodology to evaluate the correspondence between real conditions and accelerated tests of a thyristor system used in a power plant. 1853-1858 - E. Hornung, Uwe Scheuermann:
Reliability of low current electrical spring contacts in power modules. 1859-1864 - Yannick Rey-Tauriac, Olivier de Sagazan, M. Taurin, Olivier Bonnaud:
Robustness improvement of VDMOS transistors in Bipolar/CMOS/DMOS technology. 1865-1869 - Gerard Coquery, Guy Lefranc, T. Licht, Richard Lallemand, Norbert Seliger, H. Berg:
High temperature reliability on automotive power modules verified by power cycling tests up to 150degreeC. 1871-1876 - Alberto Castellazzi, V. Kartal, R. Kraus, Norbert Seliger, Martin Honsberg-Riedl, Doris Schmitt-Landsiedel:
Hot-Spot Meaurements and Analysis of Electro-Thermal Effects in Low-Voltage Power-MOSFET's. 1877-1882 - J. Vobecký, Pavel Hazdra:
Advanced Local Lifetime Control for Higher Reliability of Power Devices. 1883-1888 - Tesfaye Ayalew, Andreas Gehring, Jong Mun Park, Tibor Grasser, Siegfried Selberherr:
Improving SiC lateral DMOSFET reliability under high field stress. 1889-1894 - A. Icaza Deckelmann, Gerhard K. M. Wachutka, Franz Hirler, J. Krumrey, R. Henninger:
Avalanche breakdown capability of Power DMOS Transistors and the Wunsch-Bell relation. 1895-1900 - Stephane Azzopardi, Eric Woirgard, Jean-Michel Vinassa, Olivier Briat, Christian Zardini:
IGBT Power modules thermal characterization : what is the optimum between a low current - high voltage or a high current - low voltage test condition for the same electrical power? 1901-1906 - Giovanni Busatto, Francesco Iannuzzo, Francesco Velardi, M. Valentino, Giampiero Pepe:
Non-Destructive Detection of Current Distribution in Power Modules based on Pulsed Magnetic Measurement. 1907-1912 - K. I. Nuttall, Octavian Buiu, V. V. N. Obreja:
Surface leakage current related failure of power silicon devices operated at high junction temperature. 1913-1918 - Lionel Buchaillot:
Feedback of MEMS reliability study on the design stage: a step toward Reliability Aided Design (RAD). 1919-1928 - Cezary Sydlo, Kabula Mutamba, L. Divac Krnic, Bastian Mottet, Hans L. Hartnagel:
Reliability studies on integrated GaAs power-sensor structures using pulsed electrical stress. 1929-1933 - I. Boyer Heard, R. Coquillé, D. Rivière, P.-Y. Klimonda:
Characterization and reliability of a switch matrix based on MOEMS technology. 1935-1937 - Angie Tetelin, Claude Pellet, Jean-Yves Delétage, B. Carbonne, Yves Danto:
Moisture diffusion in BCB resins used for MEMS packaging. 1939-1944 - Sylvaine Muratet, Jean-Yves Fourniols, Georges Soto-Romero, Aitor Endemaño Isasi, Antoine Marty, Marc P. Y. Desmulliez:
MEMS reliability modelling methodology: application to wobble micromotor failure analysis. 1945-1949 - Guillaume Marinier, Stefan Dilhaire, Luis David Patiño Lopez, Mohamed Benzohra:
Determination of passive SiO2-Au microstructure resonant frequencies. 1951-1955 - Petra Schmitt, Francis Pressecq, Xavier Lafontan, Q.-H. Duong, Patrick Pons, Jean Marc Nicot, Coumar Oudéa, Daniel Estève, Jean-Yves Fourniols, Henri Camon:
Application of MEMS behavioral simulation to Physics of Failure (PoF) modeling. 1957-1962 - Sebastien Rigo, Phillippe Goudeau, Jean-Michel Desmarres, Talal Masri, Jacques-Alain Petit, Petra Schmitt:
Correlation between X-ray micro-diffraction and a developed analytical model to measure the residual stresses in suspended structures in MEMS. 1963-1968
Volume 43, Number 12, December 2003
- Clemens J. M. Lasance:
Thermally driven reliability issues in microelectronic systems: status-quo and challenges. 1969-1974 - Glenn A. Rinne:
Issues in accelerated electromigration of solder bumps. 1975-1980 - Hongguo Zhang, Pant Gurang, Nihdi Sigh, Quvdo Manuel, Robert M. Wallace, Bruce Gnade, Kevin Stokes:
The effect of small-signal AC voltages on C-V characterization and parameter extraction of SiO2 thin films. 1981-1985 - X. A. Cao, P. M. Sandvik, S. F. LeBoeuf, S. D. Arthur:
Defect generation in InGaN/GaN light-emitting diodes under forward and reverse electrical stresses. 1987-1991 - Y. S. Roh, A. Asiz, W. P. Zhang, Yunping Xi:
Experimental study and theoretical prediction of aging induced frequency shift of crystal resonators and oscillators. 1993-2000 - Han-Chang Tsai:
Reliable study of digital IC circuits with margin voltage among variable DC power supply, electromagnetic interference and conducting wire antenna. 2001-2009 - W. Dauksher, W. S. Burton:
An examination of the applicability of the DNP metric on first level reliability assessments in underfilled electronic packages. 2011-2020 - Hua Ye, Douglas C. Hopkins, Cemal Basaran:
Measurement of high electrical current density effects in solder joints. 2021-2029 - M. N. Islam, Yan Cheong Chan, Ahmed Sharif, M. O. Alam:
Comparative study of the dissolution kinetics of electrolytic Ni and electroless Ni-P by the molten Sn3.5Ag0.5Cu solder alloy. 2031-2037 - Y. F. Yao, T. Y. Lin, K. H. Chua:
Improving the deflection of wire bonds in stacked chip scale package (CSP). 2039-2045 - Insu Jeon, Qwanho Chung:
The study on failure mechanisms of bond pad metal peeling: Part A--Experimental investigation. 2047-2054 - Insu Jeon:
The study on failure mechanisms of bond pad metal peeling: Part B--Numerical analysis. 2055-2064 - Kazuto Nishida, Kazumichi Shimizu, Michiro Yoshino, Hideo Koguchi, Nipon Taweejun:
Reliability evaluation of ultra-thin CSP using new flip-chip bonding technology--double-sided CSP and single-sided CSP. 2065-2075 - Mohammad Yunus, K. Srihari, James M. Pitarresi, Anthony Primavera:
Effect of voids on the reliability of BGA/CSP solder joints. 2077-2086 - Ee-Hua Wong, Ranjan Rajoo:
Moisture absorption and diffusion characterisation of packaging materials--advanced treatment. 2087-2096
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