BibTeX records: Masaaki Higashitani

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@article{DBLP:journals/jssc/LiuYSCLBYZYOSACGHKLMNPPSWYNTHMGTYOOTIF14,
  author       = {Tz{-}Yi Liu and
                  Tian Hong Yan and
                  Roy Scheuerlein and
                  Yingchang Chen and
                  Jeffrey KoonYee Lee and
                  Gopinath Balakrishnan and
                  Gordon Yee and
                  Henry Zhang and
                  Alex Yap and
                  Jingwen Ouyang and
                  Takahiko Sasaki and
                  Ali Al{-}Shamma and
                  Chin{-}Yu Chen and
                  Mayank Gupta and
                  Greg Hilton and
                  Achal Kathuria and
                  Vincent Lai and
                  Masahide Matsumoto and
                  Anurag Nigam and
                  Anil Pai and
                  Jayesh Pakhale and
                  Chang Hua Siau and
                  Xiaoxia Wu and
                  Yibo Yin and
                  Nicolas Nagel and
                  Yoichiro Tanaka and
                  Masaaki Higashitani and
                  Tim Minvielle and
                  Chandu Gorla and
                  Takayuki Tsukamoto and
                  Takeshi Yamaguchi and
                  Mutsumi Okajima and
                  Takayuki Okamura and
                  Satoru Takase and
                  Hirofumi Inoue and
                  Luca Fasoli},
  title        = {A 130.7-mm\({}^{\mbox{2}}\) 2-Layer 32-Gb ReRAM Memory Device in 24-nm
                  Technology},
  journal      = {{IEEE} J. Solid State Circuits},
  volume       = {49},
  number       = {1},
  pages        = {140--153},
  year         = {2014},
  url          = {https://doi.org/10.1109/JSSC.2013.2280296},
  doi          = {10.1109/JSSC.2013.2280296},
  timestamp    = {Sun, 30 Aug 2020 01:00:00 +0200},
  biburl       = {https://dblp.org/rec/journals/jssc/LiuYSCLBYZYOSACGHKLMNPPSWYNTHMGTYOOTIF14.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}
@inproceedings{DBLP:conf/isscc/LiuYSCLBYZYOSAACGHJKLMMNPPSWYPKHWNTHMGTYOOTHIFMSQ13,
  author       = {Tz{-}Yi Liu and
                  Tian Hong Yan and
                  Roy Scheuerlein and
                  Yingchang Chen and
                  Jeffrey KoonYee Lee and
                  Gopinath Balakrishnan and
                  Gordon Yee and
                  Henry Zhang and
                  Alex Yap and
                  Jingwen Ouyang and
                  Takahiko Sasaki and
                  Sravanti Addepalli and
                  Ali Al{-}Shamma and
                  Chin{-}Yu Chen and
                  Mayank Gupta and
                  Greg Hilton and
                  Saurabh Joshi and
                  Achal Kathuria and
                  Vincent Lai and
                  Deep Masiwal and
                  Masahide Matsumoto and
                  Anurag Nigam and
                  Anil Pai and
                  Jayesh Pakhale and
                  Chang Hua Siau and
                  Xiaoxia Wu and
                  Ronald Yin and
                  Liping Peng and
                  Jang Yong Kang and
                  Sharon Huynh and
                  Huijuan Wang and
                  Nicolas Nagel and
                  Yoichiro Tanaka and
                  Masaaki Higashitani and
                  Tim Minvielle and
                  Chandu Gorla and
                  Takayuki Tsukamoto and
                  Takeshi Yamaguchi and
                  Mutsumi Okajima and
                  Takayuki Okamura and
                  Satoru Takase and
                  Takahiko Hara and
                  Hirofumi Inoue and
                  Luca Fasoli and
                  Mehrdad Mofidi and
                  Ritu Shrivastava and
                  Khandker Quader},
  title        = {A 130.7mm\({}^{\mbox{2}}\) 2-layer 32Gb ReRAM memory device in 24nm
                  technology},
  booktitle    = {2013 {IEEE} International Solid-State Circuits Conference - Digest
                  of Technical Papers, {ISSCC} 2013, San Francisco, CA, USA, February
                  17-21, 2013},
  pages        = {210--211},
  publisher    = {{IEEE}},
  year         = {2013},
  url          = {https://doi.org/10.1109/ISSCC.2013.6487703},
  doi          = {10.1109/ISSCC.2013.6487703},
  timestamp    = {Mon, 10 Aug 2020 01:00:00 +0200},
  biburl       = {https://dblp.org/rec/conf/isscc/LiuYSCLBYZYOSAACGHJKLMMNPPSWYPKHWNTHMGTYOOTHIFMSQ13.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}
@article{DBLP:journals/jssc/FukudaWMKSTKSTSOEINMMFYSNHTKMSYSSDWKMMNHLHMLMNH12,
  author       = {Koichi Fukuda and
                  Yoshihisa Watanabe and
                  Eiichi Makino and
                  Koichi Kawakami and
                  Jumpei Sato and
                  Teruo Takagiwa and
                  Naoaki Kanagawa and
                  Hitoshi Shiga and
                  Naoya Tokiwa and
                  Yoshihiko Shindo and
                  Takeshi Ogawa and
                  Toshiaki Edahiro and
                  Makoto Iwai and
                  Osamu Nagao and
                  Junji Musha and
                  Takatoshi Minamoto and
                  Yuka Furuta and
                  Kosuke Yanagidaira and
                  Yuya Suzuki and
                  Dai Nakamura and
                  Yoshikazu Hosomura and
                  Rieko Tanaka and
                  Hiromitsu Komai and
                  Mai Muramoto and
                  Go Shikata and
                  Ayako Yuminaka and
                  Kiyofumi Sakurai and
                  Manabu Sakai and
                  Hong Ding and
                  Mitsuyuki Watanabe and
                  Yosuke Kato and
                  Toru Miwa and
                  Alex Mak and
                  Masaru Nakamichi and
                  Gertjan Hemink and
                  Dana Lee and
                  Masaaki Higashitani and
                  Brian Murphy and
                  Bo Lei and
                  Yasuhiko Matsunaga and
                  Kiyomi Naruke and
                  Takahiko Hara},
  title        = {A 151-mm\({}^{\mbox{2}}\) 64-Gb 2 Bit/Cell {NAND} Flash Memory in
                  24-nm {CMOS} Technology},
  journal      = {{IEEE} J. Solid State Circuits},
  volume       = {47},
  number       = {1},
  pages        = {75--84},
  year         = {2012},
  url          = {https://doi.org/10.1109/JSSC.2011.2164711},
  doi          = {10.1109/JSSC.2011.2164711},
  timestamp    = {Sun, 30 Aug 2020 01:00:00 +0200},
  biburl       = {https://dblp.org/rec/journals/jssc/FukudaWMKSTKSTSOEINMMFYSNHTKMSYSSDWKMMNHLHMLMNH12.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}
@inproceedings{DBLP:conf/isscc/ShibataKH12,
  author       = {Noboru Shibata and
                  Kazushige Kanda and
                  Toshiki Hisada and
                  Katsuaki Isobe and
                  Manabu Sato and
                  Yui Shimizu and
                  Takahiro Shimizu and
                  Takahiro Sugimoto and
                  Tomohiro Kobayashi and
                  Kazuko Inuzuka and
                  Naoaki Kanagawa and
                  Yasuyuki Kajitani and
                  Takeshi Ogawa and
                  J. Nakai and
                  Kiyoaki Iwasa and
                  Masatsugu Kojima and
                  Toshihiro Suzuki and
                  Yuya Suzuki and
                  Shintaro Sakai and
                  Tomofumi Fujimura and
                  Yuko Utsunomiya and
                  Toshifumi Hashimoto and
                  Makoto Miakashi and
                  Naoki Kobayashi and
                  M. Inagaki and
                  Yuuki Matsumoto and
                  Satoshi Inoue and
                  Yoshinao Suzuki and
                  D. He and
                  Yasuhiko Honda and
                  Junji Musha and
                  Masaki Nakagawa and
                  Mitsuaki Honma and
                  Naofumi Abiko and
                  Mitsumasa Koyanagi and
                  Masahiro Yoshihara and
                  Kazumi Ino and
                  Mitsuhiro Noguchi and
                  Teruhiko Kamei and
                  Yosuke Kato and
                  Shingo Zaitsu and
                  Hiroaki Nasu and
                  Takuya Ariki and
                  Hardwell Chibvongodze and
                  Mitsuyuki Watanabe and
                  Hong Ding and
                  Naoki Ookuma and
                  Ryuji Yamashita and
                  G. Liang and
                  Gertjan Hemink and
                  Farookh Moogat and
                  Cuong Trinh and
                  Masaaki Higashitani and
                  Tuan Pham and
                  Kousuke Kanazawa},
  title        = {A 19nm 112.8mm\({}^{\mbox{2}}\) 64Gb multi-level flash memory with
                  400Mb/s/pin 1.8V Toggle Mode interface},
  booktitle    = {2012 {IEEE} International Solid-State Circuits Conference, {ISSCC}
                  2012, San Francisco, CA, USA, February 19-23, 2012},
  pages        = {422--424},
  publisher    = {{IEEE}},
  year         = {2012},
  url          = {https://doi.org/10.1109/ISSCC.2012.6177073},
  doi          = {10.1109/ISSCC.2012.6177073},
  timestamp    = {Wed, 10 Mar 2021 00:00:00 +0100},
  biburl       = {https://dblp.org/rec/conf/isscc/ShibataKH12.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}
@inproceedings{DBLP:conf/isscc/LiLO12,
  author       = {Yan Li and
                  Seungpil Lee and
                  Ken Oowada and
                  Hao Nguyen and
                  Qui Nguyen and
                  Nima Mokhlesi and
                  Cynthia Hsu and
                  Jason Li and
                  Venky Ramachandra and
                  Teruhiko Kamei and
                  Masaaki Higashitani and
                  Tuan Pham and
                  Mitsuaki Honma and
                  Yoshihisa Watanabe and
                  Kazumi Ino and
                  Binh Le and
                  Byungki Woo and
                  Khin Htoo and
                  Taiyuan Tseng and
                  Long Pham and
                  Frank Tsai and
                  Kwang{-}Ho Kim and
                  Yi{-}Chieh Chen and
                  Min She and
                  Jonghak Yuh and
                  Alex Chu and
                  Chen Chen and
                  Ruchi Puri and
                  Hung{-}Szu Lin and
                  Yi{-}Fang Chen and
                  William Mak and
                  Jonathan Huynh and
                  Jim Chan and
                  Mitsuyuki Watanabe and
                  Daniel Yang and
                  Grishma Shah and
                  Pavithra Souriraj and
                  Dinesh Tadepalli and
                  Tenugu Suman and
                  Ray Gao and
                  Viski Popuri and
                  Behdad Azarbayjani and
                  Ravindra Madpur and
                  James Lan and
                  Emilio Yero and
                  Feng Pan and
                  Patrick Hong and
                  Jang Yong Kang and
                  Farookh Moogat and
                  Yupin Fong and
                  Raul Cernea and
                  Sharon Huynh and
                  Cuong Trinh and
                  Mehrdad Mofidi and
                  Ritu Shrivastava and
                  Khandker Quader},
  title        = {128Gb 3b/cell {NAND} flash memory in 19nm technology with 18MB/s write
                  rate and 400Mb/s toggle mode},
  booktitle    = {2012 {IEEE} International Solid-State Circuits Conference, {ISSCC}
                  2012, San Francisco, CA, USA, February 19-23, 2012},
  pages        = {436--437},
  publisher    = {{IEEE}},
  year         = {2012},
  url          = {https://doi.org/10.1109/ISSCC.2012.6177080},
  doi          = {10.1109/ISSCC.2012.6177080},
  timestamp    = {Thu, 15 Mar 2018 00:00:00 +0100},
  biburl       = {https://dblp.org/rec/conf/isscc/LiLO12.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}
@inproceedings{DBLP:conf/isscc/FukudaWMKSTKSTSEOINMMYSNHKFMTSYSSDWKMMNHLHMLMNH11,
  author       = {Koichi Fukuda and
                  Yoshihisa Watanabe and
                  Eiichi Makino and
                  Koichi Kawakami and
                  Jumpei Sato and
                  Teruo Takagiwa and
                  Naoaki Kanagawa and
                  Hitoshi Shiga and
                  Naoya Tokiwa and
                  Yoshihiko Shindo and
                  Toshiaki Edahiro and
                  Takeshi Ogawa and
                  Makoto Iwai and
                  Osamu Nagao and
                  Junji Musha and
                  Takatoshi Minamoto and
                  Kosuke Yanagidaira and
                  Yuya Suzuki and
                  Dai Nakamura and
                  Yoshikazu Hosomura and
                  Hiromitsu Komai and
                  Yuka Furuta and
                  Mai Muramoto and
                  Rieko Tanaka and
                  Go Shikata and
                  Ayako Yuminaka and
                  Kiyofumi Sakurai and
                  Manabu Sakai and
                  Hong Ding and
                  Mitsuyuki Watanabe and
                  Yosuke Kato and
                  Toru Miwa and
                  Alex Mak and
                  Masaru Nakamichi and
                  Gertjan Hemink and
                  Dana Lee and
                  Masaaki Higashitani and
                  Brian Murphy and
                  Bo Lei and
                  Yasuhiko Matsunaga and
                  Kiyomi Naruke and
                  Takahiko Hara},
  title        = {A 151mm\({}^{\mbox{2}}\) 64Gb {MLC} {NAND} flash memory in 24nm {CMOS}
                  technology},
  booktitle    = {{IEEE} International Solid-State Circuits Conference, {ISSCC} 2011,
                  Digest of Technical Papers, San Francisco, CA, USA, 20-24 February,
                  2011},
  pages        = {198--199},
  publisher    = {{IEEE}},
  year         = {2011},
  url          = {https://doi.org/10.1109/ISSCC.2011.5746280},
  doi          = {10.1109/ISSCC.2011.5746280},
  timestamp    = {Wed, 16 Oct 2019 14:14:55 +0200},
  biburl       = {https://dblp.org/rec/conf/isscc/FukudaWMKSTKSTSEOINMMYSNHKFMTSYSSDWKMMNHLHMLMNH11.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}
@article{DBLP:journals/jssc/CerneaPMCLLTTN009,
  author       = {Raul Cernea and
                  Long Pham and
                  Farookh Moogat and
                  Siu Lung Chan and
                  Binh Le and
                  Yan Li and
                  Shouchang Tsao and
                  Taiyuan Tseng and
                  Khanh Nguyen and
                  Jason Li and
                  Jayson Hu and
                  Jonghak Yuh and
                  Cynthia Hsu and
                  Fanglin Zhang and
                  Teruhiko Kamei and
                  Hiroaki Nasu and
                  Phil Kliza and
                  Khin Htoo and
                  Jeffrey Lutze and
                  Yingda Dong and
                  Masaaki Higashitani and
                  Junhui Yang and
                  Hung{-}Szu Lin and
                  Vamshi Sakhamuri and
                  Alan Li and
                  Feng Pan and
                  Sridhar Yadala and
                  Subodh Taigor and
                  Kishan Pradhan and
                  James Lan and
                  Jim Chan and
                  Takumi Abe and
                  Yasuyuki Fukuda and
                  Hideo Mukai and
                  Koichi Kawakami and
                  Connie Liang and
                  Tommy Ip and
                  Shu{-}Fen Chang and
                  Jaggi Lakshmipathi and
                  Sharon Huynh and
                  Dimitris Pantelakis and
                  Mehrdad Mofidi and
                  Khandker Quader},
  title        = {A 34 MB/s {MLC} Write Throughput 16 Gb {NAND} With All Bit Line Architecture
                  on 56 nm Technology},
  journal      = {{IEEE} J. Solid State Circuits},
  volume       = {44},
  number       = {1},
  pages        = {186--194},
  year         = {2009},
  url          = {https://doi.org/10.1109/JSSC.2008.2007152},
  doi          = {10.1109/JSSC.2008.2007152},
  timestamp    = {Sun, 30 Aug 2020 01:00:00 +0200},
  biburl       = {https://dblp.org/rec/journals/jssc/CerneaPMCLLTTN009.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}
@article{DBLP:journals/jssc/LiLFPKPSNMHKHYK09,
  author       = {Yan Li and
                  Seungpil Lee and
                  Yupin Fong and
                  Feng Pan and
                  Tien{-}Chien Kuo and
                  Jongmin Park and
                  Tapan Samaddar and
                  Hao Nguyen and
                  Man Mui and
                  Khin Htoo and
                  Teruhiko Kamei and
                  Masaaki Higashitani and
                  Emilio Yero and
                  Gyuwan Kwon and
                  Phil Kliza and
                  Jun Wan and
                  Tetsuya Kaneko and
                  Hiroshi Maejima and
                  Hitoshi Shiga and
                  Makoto Hamada and
                  Norihiro Fujita and
                  Kazunori Kanebako and
                  Eugene Tam and
                  Anne Koh and
                  Iris Lu and
                  Calvin Chia{-}Hong Kuo and
                  Trung Pham and
                  Jonathan Huynh and
                  Qui Nguyen and
                  Hardwell Chibvongodze and
                  Mitsuyuki Watanabe and
                  Ken Oowada and
                  Grishma Shah and
                  Byungki Woo and
                  Ray Gao and
                  Jim Chan and
                  James Lan and
                  Patrick Hong and
                  Liping Peng and
                  Debi Das and
                  Dhritiman Ghosh and
                  Vivek Kalluru and
                  Sanjay Kulkarni and
                  Raul{-}Adrian Cernea and
                  Sharon Huynh and
                  Dimitris Pantelakis and
                  Chi{-}Ming Wang and
                  Khandker Quader},
  title        = {A 16 Gb 3-Bit Per Cell {(X3)} {NAND} Flash Memory on 56 nm Technology
                  With 8 MB/s Write Rate},
  journal      = {{IEEE} J. Solid State Circuits},
  volume       = {44},
  number       = {1},
  pages        = {195--207},
  year         = {2009},
  url          = {https://doi.org/10.1109/JSSC.2008.2007154},
  doi          = {10.1109/JSSC.2008.2007154},
  timestamp    = {Thu, 14 Sep 2023 01:00:00 +0200},
  biburl       = {https://dblp.org/rec/journals/jssc/LiLFPKPSNMHKHYK09.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}
@inproceedings{DBLP:conf/isscc/TrinhSN09,
  author       = {Cuong Trinh and
                  Noboru Shibata and
                  Takeshi Nakano and
                  Mikio Ogawa and
                  Jumpei Sato and
                  Yoshikazu Takeyama and
                  Katsuaki Isobe and
                  Binh Le and
                  Farookh Moogat and
                  Nima Mokhlesi and
                  Kenji Kozakai and
                  Patrick Hong and
                  Teruhiko Kamei and
                  Kiyoaki Iwasa and
                  J. Nakai and
                  Takahiro Shimizu and
                  Mitsuaki Honma and
                  Shintaro Sakai and
                  Toshimasa Kawaai and
                  Satoru Hoshi and
                  Jonghak Yuh and
                  Cynthia Hsu and
                  Taiyuan Tseng and
                  Jason Li and
                  Jayson Hu and
                  M. Liu and
                  Shahzad Khalid and
                  J. Chen and
                  Mitsuyuki Watanabe and
                  Hung{-}Szu Lin and
                  Junhui Yang and
                  K. McKay and
                  Khanh Nguyen and
                  Tuan Pham and
                  Y. Matsuda and
                  K. Nakamura and
                  Kazunori Kanebako and
                  Susumu Yoshikawa and
                  W. Igarashi and
                  Atsushi Inoue and
                  T. Takahashi and
                  Yukio Komatsu and
                  C. Suzuki and
                  Kousuke Kanazawa and
                  Masaaki Higashitani and
                  Seungpil Lee and
                  T. Murai and
                  K. Nguyen and
                  James Lan and
                  Sharon Huynh and
                  Mark Murin and
                  Mark Shlick and
                  Menahem Lasser and
                  Raul Cernea and
                  Mehrdad Mofidi and
                  K. Schuegraf and
                  Khandker Quader},
  title        = {A 5.6MB/s 64Gb 4b/Cell {NAND} Flash memory in 43nm {CMOS}},
  booktitle    = {{IEEE} International Solid-State Circuits Conference, {ISSCC} 2009,
                  Digest of Technical Papers, San Francisco, CA, USA, 8-12 February,
                  2009},
  pages        = {246--247},
  publisher    = {{IEEE}},
  year         = {2009},
  url          = {https://doi.org/10.1109/ISSCC.2009.4977400},
  doi          = {10.1109/ISSCC.2009.4977400},
  timestamp    = {Wed, 24 Mar 2021 00:00:00 +0100},
  biburl       = {https://dblp.org/rec/conf/isscc/TrinhSN09.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}
@inproceedings{DBLP:conf/isscc/CerneaPMCLLTTNLHPHZKNKHLDHYLSLPYTPLCAFMKLICLHPMQ08,
  author       = {Raul Cernea and
                  Long Pham and
                  Farookh Moogat and
                  Siu Lung Chan and
                  Binh Le and
                  Yan Li and
                  Shouchang Tsao and
                  Taiyuan Tseng and
                  Khanh Nguyen and
                  Jason Li and
                  Jayson Hu and
                  Jong Park and
                  Cynthia Hsu and
                  Fanglin Zhang and
                  Teruhiko Kamei and
                  Hiroaki Nasu and
                  Phil Kliza and
                  Khin Htoo and
                  Jeffery Lutze and
                  Yingda Dong and
                  Masaaki Higashitani and
                  Junhui Yang and
                  Hung{-}Szu Lin and
                  Vamshi Sakhamuri and
                  Alan Li and
                  Feng Pan and
                  Sridhar Yadala and
                  Subodh Taigor and
                  Kishan Pradhan and
                  James Lan and
                  Jim Chan and
                  Takumi Abe and
                  Yasuyuki Fukuda and
                  Hideo Mukai and
                  Koichi Kawakami and
                  Connie Liang and
                  Tommy Ip and
                  Shu{-}Fen Chang and
                  Jaggi Lakshmipathi and
                  Sharon Huynh and
                  Dimitris Pantelakis and
                  Mehrdad Mofidi and
                  Khandker Quader},
  title        = {A 34MB/s-Program-Throughput 16Gb {MLC} {NAND} with All-Bitline Architecture
                  in 56nm},
  booktitle    = {2008 {IEEE} International Solid-State Circuits Conference, {ISSCC}
                  2008, Digest of Technical Papers, San Francisco, CA, USA, February
                  3-7, 2008},
  pages        = {420--421},
  publisher    = {{IEEE}},
  year         = {2008},
  url          = {https://doi.org/10.1109/ISSCC.2008.4523236},
  doi          = {10.1109/ISSCC.2008.4523236},
  timestamp    = {Wed, 16 Oct 2019 14:14:55 +0200},
  biburl       = {https://dblp.org/rec/conf/isscc/CerneaPMCLLTTNLHPHZKNKHLDHYLSLPYTPLCAFMKLICLHPMQ08.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}
@inproceedings{DBLP:conf/isscc/KandaKYHYMKMCTCLMTOKFTISNSOKYAHMNYHIKHMIO08,
  author       = {Kazushige Kanda and
                  Masaru Koyanagi and
                  Toshio Yamamura and
                  Koji Hosono and
                  Masahiro Yoshihara and
                  Toru Miwa and
                  Yosuke Kato and
                  Alex Mak and
                  Siu Lung Chan and
                  Frank Tsai and
                  Raul Cernea and
                  Binh Le and
                  Eiichi Makino and
                  Takashi Taira and
                  Hiroyuki Otake and
                  Norifumi Kajimura and
                  Susumu Fujimura and
                  Yoshiaki Takeuchi and
                  Mikihiko Itoh and
                  Masanobu Shirakawa and
                  Dai Nakamura and
                  Yuya Suzuki and
                  Yuki Okukawa and
                  Masatsugu Kojima and
                  Kazuhide Yoneya and
                  Takamichi Arizono and
                  Toshiki Hisada and
                  Shinji Miyamoto and
                  Mitsuhiro Noguchi and
                  Toshitake Yaegashi and
                  Masaaki Higashitani and
                  Fumitoshi Ito and
                  Teruhiko Kamei and
                  Gertjan Hemink and
                  Tooru Maruyama and
                  Kazumi Ino and
                  Shigeo Ohshima},
  title        = {A 120mm\({}^{\mbox{2}}\) 16Gb 4-MLC {NAND} Flash Memory with 43nm
                  {CMOS} Technology},
  booktitle    = {2008 {IEEE} International Solid-State Circuits Conference, {ISSCC}
                  2008, Digest of Technical Papers, San Francisco, CA, USA, February
                  3-7, 2008},
  pages        = {430--431},
  publisher    = {{IEEE}},
  year         = {2008},
  url          = {https://doi.org/10.1109/ISSCC.2008.4523241},
  doi          = {10.1109/ISSCC.2008.4523241},
  timestamp    = {Wed, 17 May 2017 01:00:00 +0200},
  biburl       = {https://dblp.org/rec/conf/isscc/KandaKYHYMKMCTCLMTOKFTISNSOKYAHMNYHIKHMIO08.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}
@inproceedings{DBLP:conf/isscc/LiLFPKPSNMHKHYKKWKMSHFKTKLKPHNCWOSWGCLHPDGKKCHPWQ08,
  author       = {Yan Li and
                  Seungpil Lee and
                  Yupin Fong and
                  Feng Pan and
                  Tien{-}Chien Kuo and
                  Jong Park and
                  Tapan Samaddar and
                  Hao Nguyen and
                  Man Mui and
                  Khin Htoo and
                  Teruhiko Kamei and
                  Masaaki Higashitani and
                  Emilio Yero and
                  Gyuwan Kwon and
                  Phil Kliza and
                  Jun Wan and
                  Tetsuya Kaneko and
                  Hiroshi Maejima and
                  Hitoshi Shiga and
                  Makoto Hamada and
                  Norihiro Fujita and
                  Kazunori Kanebako and
                  Eugene Tam and
                  Anne Koh and
                  Iris Lu and
                  Calvin Chia{-}Hong Kuo and
                  Trung Pham and
                  Jonathan Huynh and
                  Qui Nguyen and
                  Hardwell Chibvongodze and
                  Mitsuyuki Watanabe and
                  Ken Oowada and
                  Grishma Shah and
                  Byungki Woo and
                  Ray Gao and
                  Jim Chan and
                  James Lan and
                  Patrick Hong and
                  Liping Peng and
                  Debi Das and
                  Dhritiman Ghosh and
                  Vivek Kalluru and
                  Sanjay Kulkarni and
                  Raul Cernea and
                  Sharon Huynh and
                  Dimitris Pantelakis and
                  Chi{-}Ming Wang and
                  Khandker Quader},
  title        = {A 16Gb 3b/ Cell {NAND} Flash Memory in 56nm with 8MB/s Write Rate},
  booktitle    = {2008 {IEEE} International Solid-State Circuits Conference, {ISSCC}
                  2008, Digest of Technical Papers, San Francisco, CA, USA, February
                  3-7, 2008},
  pages        = {506--507},
  publisher    = {{IEEE}},
  year         = {2008},
  url          = {https://doi.org/10.1109/ISSCC.2008.4523279},
  doi          = {10.1109/ISSCC.2008.4523279},
  timestamp    = {Thu, 14 Sep 2023 01:00:00 +0200},
  biburl       = {https://dblp.org/rec/conf/isscc/LiLFPKPSNMHKHYKKWKMSHFKTKLKPHNCWOSWGCLHPDGKKCHPWQ08.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}
@article{DBLP:journals/jssc/TakeuchiKFOHSWF07,
  author       = {Ken Takeuchi and
                  Yasushi Kameda and
                  Susumu Fujimura and
                  Hiroyuki Otake and
                  Koji Hosono and
                  Hitoshi Shiga and
                  Yoshihisa Watanabe and
                  Takuya Futatsuyama and
                  Yoshihiko Shindo and
                  Masatsugu Kojima and
                  Makoto Iwai and
                  Masanobu Shirakawa and
                  Masayuki Ichige and
                  Kazuo Hatakeyama and
                  Shinichi Tanaka and
                  Teruhiko Kamei and
                  Jia{-}Yi Fu and
                  Adi Cernea and
                  Yan Li and
                  Masaaki Higashitani and
                  Gertjan Hemink and
                  Shinji Sato and
                  Ken Oowada and
                  Shih{-}Chung Lee and
                  Naoki Hayashida and
                  Jun Wan and
                  Jeffrey Lutze and
                  Shouchang Tsao and
                  Mehrdad Mofidi and
                  Kiyofumi Sakurai and
                  Naoya Tokiwa and
                  Hiroko Waki and
                  Yasumitsu Nozawa and
                  Kazuhisa Kanazawa and
                  Shigeo Ohshima},
  title        = {A 56-nm {CMOS} 99-mm\({}^{\mbox{2}}\) 8-Gb Multi-Level {NAND} Flash
                  Memory With 10-MB/s Program Throughput},
  journal      = {{IEEE} J. Solid State Circuits},
  volume       = {42},
  number       = {1},
  pages        = {219--232},
  year         = {2007},
  url          = {https://doi.org/10.1109/JSSC.2006.888299},
  doi          = {10.1109/JSSC.2006.888299},
  timestamp    = {Thu, 14 Sep 2023 01:00:00 +0200},
  biburl       = {https://dblp.org/rec/journals/jssc/TakeuchiKFOHSWF07.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}
@article{DBLP:journals/jssc/HaraFKSHMNAKFTA06,
  author       = {Takahiko Hara and
                  Koichi Fukuda and
                  Kazuhisa Kanazawa and
                  Noboru Shibata and
                  Koji Hosono and
                  Hiroshi Maejima and
                  Michio Nakagawa and
                  Takumi Abe and
                  Masatsugu Kojima and
                  Masaki Fujiu and
                  Yoshiaki Takeuchi and
                  Kazumi Amemiya and
                  Midori Morooka and
                  Teruhiko Kamei and
                  Hiroaki Nasu and
                  Chi{-}Ming Wang and
                  Kiyofumi Sakurai and
                  Naoya Tokiwa and
                  Hiroko Waki and
                  Tohru Maruyama and
                  Susumu Yoshikawa and
                  Masaaki Higashitani and
                  Tuan D. Pham and
                  Yupin Fong and
                  Toshiharu Watanabe},
  title        = {A 146-mm\({}^{\mbox{2}}\) 8-gb multi-level {NAND} flash memory with
                  70-nm {CMOS} technology},
  journal      = {{IEEE} J. Solid State Circuits},
  volume       = {41},
  number       = {1},
  pages        = {161--169},
  year         = {2006},
  url          = {https://doi.org/10.1109/JSSC.2005.859027},
  doi          = {10.1109/JSSC.2005.859027},
  timestamp    = {Fri, 22 Oct 2021 01:00:00 +0200},
  biburl       = {https://dblp.org/rec/journals/jssc/HaraFKSHMNAKFTA06.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}
@inproceedings{DBLP:conf/isscc/TakeuchiKFOHSWF06,
  author       = {Ken Takeuchi and
                  Yasushi Kameda and
                  Susumu Fujimura and
                  Hiroyuki Otake and
                  Koji Hosono and
                  Hitoshi Shiga and
                  Yoshihisa Watanabe and
                  Takuya Futatsuyama and
                  Yoshihiko Shindo and
                  Masatsugu Kojima and
                  Makoto Iwai and
                  Masanobu Shirakawa and
                  Masayuki Ichige and
                  Kazuo Hatakeyama and
                  Shinichi Tanaka and
                  Teruhiko Kamei and
                  Jia{-}Yi Fu and
                  Adi Cernea and
                  Yan Li and
                  Masaaki Higashitani and
                  Gertjan Hemink and
                  Shinji Sato and
                  Ken Oowada and
                  Shih{-}Chung Lee and
                  Naoki Hayashida and
                  Jun Wan and
                  Jeffrey Lutze and
                  Shouchang Tsao and
                  Mehrdad Mofidi and
                  Kiyofumi Sakurai and
                  Naoya Tokiwa and
                  Hiroko Waki and
                  Yasumitsu Nozawa and
                  Kazuhisa Kanazawa and
                  Shigeo Ohshima},
  title        = {A 56nm {CMOS} 99mm2 8Gb Multi-level {NAND} Flash Memory with 10MB/s
                  Program Throughput},
  booktitle    = {2006 {IEEE} International Solid State Circuits Conference, {ISSCC}
                  2006, Digest of Technical Papers, an Francisco, CA, USA, February
                  6-9, 2006},
  pages        = {507--516},
  publisher    = {{IEEE}},
  year         = {2006},
  url          = {https://doi.org/10.1109/ISSCC.2006.1696083},
  doi          = {10.1109/ISSCC.2006.1696083},
  timestamp    = {Thu, 14 Sep 2023 01:00:00 +0200},
  biburl       = {https://dblp.org/rec/conf/isscc/TakeuchiKFOHSWF06.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}
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