BibTeX records: Naoya Tokiwa

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@inproceedings{DBLP:conf/isscc/HiguchiKKFTATSM21,
  author       = {Tsutomu Higuchi and
                  Takuyo Kodama and
                  Koji Kato and
                  Ryo Fukuda and
                  Naoya Tokiwa and
                  Mitsuhiro Abe and
                  Teruo Takagiwa and
                  Yuki Shimizu and
                  Junji Musha and
                  Katsuaki Sakurai and
                  Jumpei Sato and
                  Tetsuaki Utsumi and
                  Kazuhide Yoneya and
                  Yasuhiro Suematsu and
                  Toshifumi Hashimoto and
                  Takeshi Hioka and
                  Kosuke Yanagidaira and
                  Masatsugu Kojima and
                  Junya Matsuno and
                  Kei Shiraishi and
                  Kensuke Yamamoto and
                  Shintaro Hayashi and
                  Tomoharu Hashiguchi and
                  Kazuko Inuzuka and
                  Akio Sugahara and
                  Mitsuaki Honma and
                  Keiji Tsunoda and
                  Kazumasa Yamamoto and
                  Takahiro Sugimoto and
                  Tomofumi Fujimura and
                  Mizuki Kaneko and
                  Hiroki Date and
                  Osamu Kobayashi and
                  Takatoshi Minamoto and
                  Ryoichi Tachibana and
                  Itaru Yamaguchi and
                  Juan Lee and
                  Venky Ramachandra and
                  Srinivas Rajendra and
                  Tianyu Tang and
                  Siddhesh Darne and
                  Jiwang Lee and
                  Jason Li and
                  Toru Miwa and
                  Ryuji Yamashita and
                  Hiroshi Sugawara and
                  Naoki Ookuma and
                  Masahiro Kano and
                  Hiroyuki Mizukoshi and
                  Yuki Kuniyoshi and
                  Mitsuyuki Watanabe and
                  Kei Akiyama and
                  Hirotoshi Mori and
                  Akira Arimizu and
                  Yoshito Katano and
                  Masakazu Ehama and
                  Hiroshi Maejima and
                  Koji Hosono and
                  Masahiro Yoshihara},
  title        = {30.4 {A} 1Tb 3b/Cell 3D-Flash Memory in a 170+ Word-Line-Layer Technology},
  booktitle    = {{IEEE} International Solid-State Circuits Conference, {ISSCC} 2021,
                  San Francisco, CA, USA, February 13-22, 2021},
  pages        = {428--430},
  publisher    = {{IEEE}},
  year         = {2021},
  url          = {https://doi.org/10.1109/ISSCC42613.2021.9366003},
  doi          = {10.1109/ISSCC42613.2021.9366003},
  timestamp    = {Sat, 13 Mar 2021 00:00:00 +0100},
  biburl       = {https://dblp.org/rec/conf/isscc/HiguchiKKFTATSM21.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}
@inproceedings{DBLP:conf/isscc/SiauKLISVA0YANK19,
  author       = {Chang Hua Siau and
                  Kwang{-}Ho Kim and
                  Seungpil Lee and
                  Katsuaki Isobe and
                  Noboru Shibata and
                  Kapil Verma and
                  Takuya Ariki and
                  Jason Li and
                  Jong Yuh and
                  Anirudh Amarnath and
                  Qui Nguyen and
                  Ohwon Kwon and
                  Stanley Jeong and
                  Heguang Li and
                  Hua{-}Ling Hsu and
                  Taiyuan Tseng and
                  Steve Choi and
                  Siddhesh Darne and
                  Pradeep Anantula and
                  Alex Yap and
                  Hardwell Chibvongodze and
                  Hitoshi Miwa and
                  Minoru Yamashita and
                  Mitsuyuki Watanabe and
                  Koichiro Hayashi and
                  Yosuke Kato and
                  Toru Miwa and
                  Jang Yong Kang and
                  Masatoshi Okumura and
                  Naoki Ookuma and
                  Muralikrishna Balaga and
                  Venky Ramachandra and
                  Aki Matsuda and
                  Swaroop Kulkarni and
                  Raghavendra Rachineni and
                  Pai K. Manjunath and
                  Masahito Takehara and
                  Anil Pai and
                  Srinivas Rajendra and
                  Toshiki Hisada and
                  Ryo Fukuda and
                  Naoya Tokiwa and
                  Kazuaki Kawaguchi and
                  Masashi Yamaoka and
                  Hiromitsu Komai and
                  Takatoshi Minamoto and
                  Masaki Unno and
                  Susumu Ozawa and
                  Hiroshi Nakamura and
                  Tomoo Hishida and
                  Yasuyuki Kajitani and
                  Lei Lin},
  title        = {A 512Gb 3-bit/Cell 3D Flash Memory on 128-Wordline-Layer with 132MB/s
                  Write Performance Featuring Circuit-Under-Array Technology},
  booktitle    = {{IEEE} International Solid- State Circuits Conference, {ISSCC} 2019,
                  San Francisco, CA, USA, February 17-21, 2019},
  pages        = {218--220},
  publisher    = {{IEEE}},
  year         = {2019},
  url          = {https://doi.org/10.1109/ISSCC.2019.8662445},
  doi          = {10.1109/ISSCC.2019.8662445},
  timestamp    = {Wed, 16 Oct 2019 14:14:55 +0200},
  biburl       = {https://dblp.org/rec/conf/isscc/SiauKLISVA0YANK19.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}
@article{DBLP:journals/jssc/FukudaWMKSTKSTSOEINMMFYSNHTKMSYSSDWKMMNHLHMLMNH12,
  author       = {Koichi Fukuda and
                  Yoshihisa Watanabe and
                  Eiichi Makino and
                  Koichi Kawakami and
                  Jumpei Sato and
                  Teruo Takagiwa and
                  Naoaki Kanagawa and
                  Hitoshi Shiga and
                  Naoya Tokiwa and
                  Yoshihiko Shindo and
                  Takeshi Ogawa and
                  Toshiaki Edahiro and
                  Makoto Iwai and
                  Osamu Nagao and
                  Junji Musha and
                  Takatoshi Minamoto and
                  Yuka Furuta and
                  Kosuke Yanagidaira and
                  Yuya Suzuki and
                  Dai Nakamura and
                  Yoshikazu Hosomura and
                  Rieko Tanaka and
                  Hiromitsu Komai and
                  Mai Muramoto and
                  Go Shikata and
                  Ayako Yuminaka and
                  Kiyofumi Sakurai and
                  Manabu Sakai and
                  Hong Ding and
                  Mitsuyuki Watanabe and
                  Yosuke Kato and
                  Toru Miwa and
                  Alex Mak and
                  Masaru Nakamichi and
                  Gertjan Hemink and
                  Dana Lee and
                  Masaaki Higashitani and
                  Brian Murphy and
                  Bo Lei and
                  Yasuhiko Matsunaga and
                  Kiyomi Naruke and
                  Takahiko Hara},
  title        = {A 151-mm\({}^{\mbox{2}}\) 64-Gb 2 Bit/Cell {NAND} Flash Memory in
                  24-nm {CMOS} Technology},
  journal      = {{IEEE} J. Solid State Circuits},
  volume       = {47},
  number       = {1},
  pages        = {75--84},
  year         = {2012},
  url          = {https://doi.org/10.1109/JSSC.2011.2164711},
  doi          = {10.1109/JSSC.2011.2164711},
  timestamp    = {Sun, 30 Aug 2020 01:00:00 +0200},
  biburl       = {https://dblp.org/rec/journals/jssc/FukudaWMKSTKSTSOEINMMFYSNHTKMSYSSDWKMMNHLHMLMNH12.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}
@inproceedings{DBLP:conf/isscc/FukudaWMKSTKSTSEOINMMYSNHKFMTSYSSDWKMMNHLHMLMNH11,
  author       = {Koichi Fukuda and
                  Yoshihisa Watanabe and
                  Eiichi Makino and
                  Koichi Kawakami and
                  Jumpei Sato and
                  Teruo Takagiwa and
                  Naoaki Kanagawa and
                  Hitoshi Shiga and
                  Naoya Tokiwa and
                  Yoshihiko Shindo and
                  Toshiaki Edahiro and
                  Takeshi Ogawa and
                  Makoto Iwai and
                  Osamu Nagao and
                  Junji Musha and
                  Takatoshi Minamoto and
                  Kosuke Yanagidaira and
                  Yuya Suzuki and
                  Dai Nakamura and
                  Yoshikazu Hosomura and
                  Hiromitsu Komai and
                  Yuka Furuta and
                  Mai Muramoto and
                  Rieko Tanaka and
                  Go Shikata and
                  Ayako Yuminaka and
                  Kiyofumi Sakurai and
                  Manabu Sakai and
                  Hong Ding and
                  Mitsuyuki Watanabe and
                  Yosuke Kato and
                  Toru Miwa and
                  Alex Mak and
                  Masaru Nakamichi and
                  Gertjan Hemink and
                  Dana Lee and
                  Masaaki Higashitani and
                  Brian Murphy and
                  Bo Lei and
                  Yasuhiko Matsunaga and
                  Kiyomi Naruke and
                  Takahiko Hara},
  title        = {A 151mm\({}^{\mbox{2}}\) 64Gb {MLC} {NAND} flash memory in 24nm {CMOS}
                  technology},
  booktitle    = {{IEEE} International Solid-State Circuits Conference, {ISSCC} 2011,
                  Digest of Technical Papers, San Francisco, CA, USA, 20-24 February,
                  2011},
  pages        = {198--199},
  publisher    = {{IEEE}},
  year         = {2011},
  url          = {https://doi.org/10.1109/ISSCC.2011.5746280},
  doi          = {10.1109/ISSCC.2011.5746280},
  timestamp    = {Wed, 16 Oct 2019 14:14:55 +0200},
  biburl       = {https://dblp.org/rec/conf/isscc/FukudaWMKSTKSTSEOINMMYSNHKFMTSYSSDWKMMNHLHMLMNH11.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}
@inproceedings{DBLP:conf/isscc/FutatsuyamaFTSEKNIKFKAMHHLCHSDTSKKSYSNFMNLMLMWHO09,
  author       = {Takuya Futatsuyama and
                  Norihiro Fujita and
                  Naoya Tokiwa and
                  Yoshihiko Shindo and
                  Toshiaki Edahiro and
                  Teruhiko Kamei and
                  Hiroaki Nasu and
                  Makoto Iwai and
                  Koji Kato and
                  Yasuyuki Fukuda and
                  Naoaki Kanagawa and
                  Naofumi Abiko and
                  Masahide Matsumoto and
                  Toshihiko Himeno and
                  Toshifumi Hashimoto and
                  Yi{-}Ching Liu and
                  Hardwell Chibvongodze and
                  Takamitsu Hori and
                  Manabu Sakai and
                  Hong Ding and
                  Yoshiharu Takeuchi and
                  Hitoshi Shiga and
                  Norifumi Kajimura and
                  Yasuyuki Kajitani and
                  Kiyofumi Sakurai and
                  Kosuke Yanagidaira and
                  Toshihiro Suzuki and
                  Yuko Namiki and
                  Tomofumi Fujimura and
                  Man Mui and
                  Hao Nguyen and
                  Seungpil Lee and
                  Alex Mak and
                  Jeffery Lutze and
                  Tooru Maruyama and
                  Toshiharu Watanabe and
                  Takahiko Hara and
                  Shigeo Ohshima},
  title        = {A 113mm2 32Gb 3b/cell {NAND} flash memory},
  booktitle    = {{IEEE} International Solid-State Circuits Conference, {ISSCC} 2009,
                  Digest of Technical Papers, San Francisco, CA, USA, 8-12 February,
                  2009},
  pages        = {242--243},
  publisher    = {{IEEE}},
  year         = {2009},
  url          = {https://doi.org/10.1109/ISSCC.2009.4977398},
  doi          = {10.1109/ISSCC.2009.4977398},
  timestamp    = {Wed, 16 Oct 2019 14:14:55 +0200},
  biburl       = {https://dblp.org/rec/conf/isscc/FutatsuyamaFTSEKNIKFKAMHHLCHSDTSKKSYSNFMNLMLMWHO09.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}
@article{DBLP:journals/jssc/TakeuchiKFOHSWF07,
  author       = {Ken Takeuchi and
                  Yasushi Kameda and
                  Susumu Fujimura and
                  Hiroyuki Otake and
                  Koji Hosono and
                  Hitoshi Shiga and
                  Yoshihisa Watanabe and
                  Takuya Futatsuyama and
                  Yoshihiko Shindo and
                  Masatsugu Kojima and
                  Makoto Iwai and
                  Masanobu Shirakawa and
                  Masayuki Ichige and
                  Kazuo Hatakeyama and
                  Shinichi Tanaka and
                  Teruhiko Kamei and
                  Jia{-}Yi Fu and
                  Adi Cernea and
                  Yan Li and
                  Masaaki Higashitani and
                  Gertjan Hemink and
                  Shinji Sato and
                  Ken Oowada and
                  Shih{-}Chung Lee and
                  Naoki Hayashida and
                  Jun Wan and
                  Jeffrey Lutze and
                  Shouchang Tsao and
                  Mehrdad Mofidi and
                  Kiyofumi Sakurai and
                  Naoya Tokiwa and
                  Hiroko Waki and
                  Yasumitsu Nozawa and
                  Kazuhisa Kanazawa and
                  Shigeo Ohshima},
  title        = {A 56-nm {CMOS} 99-mm\({}^{\mbox{2}}\) 8-Gb Multi-Level {NAND} Flash
                  Memory With 10-MB/s Program Throughput},
  journal      = {{IEEE} J. Solid State Circuits},
  volume       = {42},
  number       = {1},
  pages        = {219--232},
  year         = {2007},
  url          = {https://doi.org/10.1109/JSSC.2006.888299},
  doi          = {10.1109/JSSC.2006.888299},
  timestamp    = {Thu, 14 Sep 2023 01:00:00 +0200},
  biburl       = {https://dblp.org/rec/journals/jssc/TakeuchiKFOHSWF07.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}
@article{DBLP:journals/jssc/HaraFKSHMNAKFTA06,
  author       = {Takahiko Hara and
                  Koichi Fukuda and
                  Kazuhisa Kanazawa and
                  Noboru Shibata and
                  Koji Hosono and
                  Hiroshi Maejima and
                  Michio Nakagawa and
                  Takumi Abe and
                  Masatsugu Kojima and
                  Masaki Fujiu and
                  Yoshiaki Takeuchi and
                  Kazumi Amemiya and
                  Midori Morooka and
                  Teruhiko Kamei and
                  Hiroaki Nasu and
                  Chi{-}Ming Wang and
                  Kiyofumi Sakurai and
                  Naoya Tokiwa and
                  Hiroko Waki and
                  Tohru Maruyama and
                  Susumu Yoshikawa and
                  Masaaki Higashitani and
                  Tuan D. Pham and
                  Yupin Fong and
                  Toshiharu Watanabe},
  title        = {A 146-mm\({}^{\mbox{2}}\) 8-gb multi-level {NAND} flash memory with
                  70-nm {CMOS} technology},
  journal      = {{IEEE} J. Solid State Circuits},
  volume       = {41},
  number       = {1},
  pages        = {161--169},
  year         = {2006},
  url          = {https://doi.org/10.1109/JSSC.2005.859027},
  doi          = {10.1109/JSSC.2005.859027},
  timestamp    = {Fri, 22 Oct 2021 01:00:00 +0200},
  biburl       = {https://dblp.org/rec/journals/jssc/HaraFKSHMNAKFTA06.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}
@inproceedings{DBLP:conf/isscc/TakeuchiKFOHSWF06,
  author       = {Ken Takeuchi and
                  Yasushi Kameda and
                  Susumu Fujimura and
                  Hiroyuki Otake and
                  Koji Hosono and
                  Hitoshi Shiga and
                  Yoshihisa Watanabe and
                  Takuya Futatsuyama and
                  Yoshihiko Shindo and
                  Masatsugu Kojima and
                  Makoto Iwai and
                  Masanobu Shirakawa and
                  Masayuki Ichige and
                  Kazuo Hatakeyama and
                  Shinichi Tanaka and
                  Teruhiko Kamei and
                  Jia{-}Yi Fu and
                  Adi Cernea and
                  Yan Li and
                  Masaaki Higashitani and
                  Gertjan Hemink and
                  Shinji Sato and
                  Ken Oowada and
                  Shih{-}Chung Lee and
                  Naoki Hayashida and
                  Jun Wan and
                  Jeffrey Lutze and
                  Shouchang Tsao and
                  Mehrdad Mofidi and
                  Kiyofumi Sakurai and
                  Naoya Tokiwa and
                  Hiroko Waki and
                  Yasumitsu Nozawa and
                  Kazuhisa Kanazawa and
                  Shigeo Ohshima},
  title        = {A 56nm {CMOS} 99mm2 8Gb Multi-level {NAND} Flash Memory with 10MB/s
                  Program Throughput},
  booktitle    = {2006 {IEEE} International Solid State Circuits Conference, {ISSCC}
                  2006, Digest of Technical Papers, an Francisco, CA, USA, February
                  6-9, 2006},
  pages        = {507--516},
  publisher    = {{IEEE}},
  year         = {2006},
  url          = {https://doi.org/10.1109/ISSCC.2006.1696083},
  doi          = {10.1109/ISSCC.2006.1696083},
  timestamp    = {Thu, 14 Sep 2023 01:00:00 +0200},
  biburl       = {https://dblp.org/rec/conf/isscc/TakeuchiKFOHSWF06.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}
@article{DBLP:journals/jssc/TanzawaUTSHTMTW02,
  author       = {Toru Tanzawa and
                  Akira Umezawa and
                  Tadayuki Taura and
                  Hitoshi Shiga and
                  Tokumasa Hara and
                  Yoshinori Takano and
                  Takeshi Miyaba and
                  Naoya Tokiwa and
                  Kentaro Watanabe and
                  Hiroshi Watanabe and
                  Kazunori Masuda and
                  Kiyomi Naruke and
                  Hideo Kato and
                  Shigeru Atsumi},
  title        = {A 44-mm\({}^{\mbox{2}}\) four-bank eight-word page-read 64-Mb flash
                  memory with flexible block redundancy and fast accurate word-line
                  voltage controller},
  journal      = {{IEEE} J. Solid State Circuits},
  volume       = {37},
  number       = {11},
  pages        = {1485--1492},
  year         = {2002},
  url          = {https://doi.org/10.1109/JSSC.2002.802356},
  doi          = {10.1109/JSSC.2002.802356},
  timestamp    = {Tue, 21 Mar 2023 00:00:00 +0100},
  biburl       = {https://dblp.org/rec/journals/jssc/TanzawaUTSHTMTW02.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}
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