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BibTeX records: Naoya Tokiwa
@inproceedings{DBLP:conf/isscc/HiguchiKKFTATSM21, author = {Tsutomu Higuchi and Takuyo Kodama and Koji Kato and Ryo Fukuda and Naoya Tokiwa and Mitsuhiro Abe and Teruo Takagiwa and Yuki Shimizu and Junji Musha and Katsuaki Sakurai and Jumpei Sato and Tetsuaki Utsumi and Kazuhide Yoneya and Yasuhiro Suematsu and Toshifumi Hashimoto and Takeshi Hioka and Kosuke Yanagidaira and Masatsugu Kojima and Junya Matsuno and Kei Shiraishi and Kensuke Yamamoto and Shintaro Hayashi and Tomoharu Hashiguchi and Kazuko Inuzuka and Akio Sugahara and Mitsuaki Honma and Keiji Tsunoda and Kazumasa Yamamoto and Takahiro Sugimoto and Tomofumi Fujimura and Mizuki Kaneko and Hiroki Date and Osamu Kobayashi and Takatoshi Minamoto and Ryoichi Tachibana and Itaru Yamaguchi and Juan Lee and Venky Ramachandra and Srinivas Rajendra and Tianyu Tang and Siddhesh Darne and Jiwang Lee and Jason Li and Toru Miwa and Ryuji Yamashita and Hiroshi Sugawara and Naoki Ookuma and Masahiro Kano and Hiroyuki Mizukoshi and Yuki Kuniyoshi and Mitsuyuki Watanabe and Kei Akiyama and Hirotoshi Mori and Akira Arimizu and Yoshito Katano and Masakazu Ehama and Hiroshi Maejima and Koji Hosono and Masahiro Yoshihara}, title = {30.4 {A} 1Tb 3b/Cell 3D-Flash Memory in a 170+ Word-Line-Layer Technology}, booktitle = {{IEEE} International Solid-State Circuits Conference, {ISSCC} 2021, San Francisco, CA, USA, February 13-22, 2021}, pages = {428--430}, publisher = {{IEEE}}, year = {2021}, url = {https://doi.org/10.1109/ISSCC42613.2021.9366003}, doi = {10.1109/ISSCC42613.2021.9366003}, timestamp = {Sat, 13 Mar 2021 00:00:00 +0100}, biburl = {https://dblp.org/rec/conf/isscc/HiguchiKKFTATSM21.bib}, bibsource = {dblp computer science bibliography, https://dblp.org} }
@inproceedings{DBLP:conf/isscc/SiauKLISVA0YANK19, author = {Chang Hua Siau and Kwang{-}Ho Kim and Seungpil Lee and Katsuaki Isobe and Noboru Shibata and Kapil Verma and Takuya Ariki and Jason Li and Jong Yuh and Anirudh Amarnath and Qui Nguyen and Ohwon Kwon and Stanley Jeong and Heguang Li and Hua{-}Ling Hsu and Taiyuan Tseng and Steve Choi and Siddhesh Darne and Pradeep Anantula and Alex Yap and Hardwell Chibvongodze and Hitoshi Miwa and Minoru Yamashita and Mitsuyuki Watanabe and Koichiro Hayashi and Yosuke Kato and Toru Miwa and Jang Yong Kang and Masatoshi Okumura and Naoki Ookuma and Muralikrishna Balaga and Venky Ramachandra and Aki Matsuda and Swaroop Kulkarni and Raghavendra Rachineni and Pai K. Manjunath and Masahito Takehara and Anil Pai and Srinivas Rajendra and Toshiki Hisada and Ryo Fukuda and Naoya Tokiwa and Kazuaki Kawaguchi and Masashi Yamaoka and Hiromitsu Komai and Takatoshi Minamoto and Masaki Unno and Susumu Ozawa and Hiroshi Nakamura and Tomoo Hishida and Yasuyuki Kajitani and Lei Lin}, title = {A 512Gb 3-bit/Cell 3D Flash Memory on 128-Wordline-Layer with 132MB/s Write Performance Featuring Circuit-Under-Array Technology}, booktitle = {{IEEE} International Solid- State Circuits Conference, {ISSCC} 2019, San Francisco, CA, USA, February 17-21, 2019}, pages = {218--220}, publisher = {{IEEE}}, year = {2019}, url = {https://doi.org/10.1109/ISSCC.2019.8662445}, doi = {10.1109/ISSCC.2019.8662445}, timestamp = {Wed, 16 Oct 2019 14:14:55 +0200}, biburl = {https://dblp.org/rec/conf/isscc/SiauKLISVA0YANK19.bib}, bibsource = {dblp computer science bibliography, https://dblp.org} }
@article{DBLP:journals/jssc/FukudaWMKSTKSTSOEINMMFYSNHTKMSYSSDWKMMNHLHMLMNH12, author = {Koichi Fukuda and Yoshihisa Watanabe and Eiichi Makino and Koichi Kawakami and Jumpei Sato and Teruo Takagiwa and Naoaki Kanagawa and Hitoshi Shiga and Naoya Tokiwa and Yoshihiko Shindo and Takeshi Ogawa and Toshiaki Edahiro and Makoto Iwai and Osamu Nagao and Junji Musha and Takatoshi Minamoto and Yuka Furuta and Kosuke Yanagidaira and Yuya Suzuki and Dai Nakamura and Yoshikazu Hosomura and Rieko Tanaka and Hiromitsu Komai and Mai Muramoto and Go Shikata and Ayako Yuminaka and Kiyofumi Sakurai and Manabu Sakai and Hong Ding and Mitsuyuki Watanabe and Yosuke Kato and Toru Miwa and Alex Mak and Masaru Nakamichi and Gertjan Hemink and Dana Lee and Masaaki Higashitani and Brian Murphy and Bo Lei and Yasuhiko Matsunaga and Kiyomi Naruke and Takahiko Hara}, title = {A 151-mm\({}^{\mbox{2}}\) 64-Gb 2 Bit/Cell {NAND} Flash Memory in 24-nm {CMOS} Technology}, journal = {{IEEE} J. Solid State Circuits}, volume = {47}, number = {1}, pages = {75--84}, year = {2012}, url = {https://doi.org/10.1109/JSSC.2011.2164711}, doi = {10.1109/JSSC.2011.2164711}, timestamp = {Sun, 30 Aug 2020 01:00:00 +0200}, biburl = {https://dblp.org/rec/journals/jssc/FukudaWMKSTKSTSOEINMMFYSNHTKMSYSSDWKMMNHLHMLMNH12.bib}, bibsource = {dblp computer science bibliography, https://dblp.org} }
@inproceedings{DBLP:conf/isscc/FukudaWMKSTKSTSEOINMMYSNHKFMTSYSSDWKMMNHLHMLMNH11, author = {Koichi Fukuda and Yoshihisa Watanabe and Eiichi Makino and Koichi Kawakami and Jumpei Sato and Teruo Takagiwa and Naoaki Kanagawa and Hitoshi Shiga and Naoya Tokiwa and Yoshihiko Shindo and Toshiaki Edahiro and Takeshi Ogawa and Makoto Iwai and Osamu Nagao and Junji Musha and Takatoshi Minamoto and Kosuke Yanagidaira and Yuya Suzuki and Dai Nakamura and Yoshikazu Hosomura and Hiromitsu Komai and Yuka Furuta and Mai Muramoto and Rieko Tanaka and Go Shikata and Ayako Yuminaka and Kiyofumi Sakurai and Manabu Sakai and Hong Ding and Mitsuyuki Watanabe and Yosuke Kato and Toru Miwa and Alex Mak and Masaru Nakamichi and Gertjan Hemink and Dana Lee and Masaaki Higashitani and Brian Murphy and Bo Lei and Yasuhiko Matsunaga and Kiyomi Naruke and Takahiko Hara}, title = {A 151mm\({}^{\mbox{2}}\) 64Gb {MLC} {NAND} flash memory in 24nm {CMOS} technology}, booktitle = {{IEEE} International Solid-State Circuits Conference, {ISSCC} 2011, Digest of Technical Papers, San Francisco, CA, USA, 20-24 February, 2011}, pages = {198--199}, publisher = {{IEEE}}, year = {2011}, url = {https://doi.org/10.1109/ISSCC.2011.5746280}, doi = {10.1109/ISSCC.2011.5746280}, timestamp = {Wed, 16 Oct 2019 14:14:55 +0200}, biburl = {https://dblp.org/rec/conf/isscc/FukudaWMKSTKSTSEOINMMYSNHKFMTSYSSDWKMMNHLHMLMNH11.bib}, bibsource = {dblp computer science bibliography, https://dblp.org} }
@inproceedings{DBLP:conf/isscc/FutatsuyamaFTSEKNIKFKAMHHLCHSDTSKKSYSNFMNLMLMWHO09, author = {Takuya Futatsuyama and Norihiro Fujita and Naoya Tokiwa and Yoshihiko Shindo and Toshiaki Edahiro and Teruhiko Kamei and Hiroaki Nasu and Makoto Iwai and Koji Kato and Yasuyuki Fukuda and Naoaki Kanagawa and Naofumi Abiko and Masahide Matsumoto and Toshihiko Himeno and Toshifumi Hashimoto and Yi{-}Ching Liu and Hardwell Chibvongodze and Takamitsu Hori and Manabu Sakai and Hong Ding and Yoshiharu Takeuchi and Hitoshi Shiga and Norifumi Kajimura and Yasuyuki Kajitani and Kiyofumi Sakurai and Kosuke Yanagidaira and Toshihiro Suzuki and Yuko Namiki and Tomofumi Fujimura and Man Mui and Hao Nguyen and Seungpil Lee and Alex Mak and Jeffery Lutze and Tooru Maruyama and Toshiharu Watanabe and Takahiko Hara and Shigeo Ohshima}, title = {A 113mm2 32Gb 3b/cell {NAND} flash memory}, booktitle = {{IEEE} International Solid-State Circuits Conference, {ISSCC} 2009, Digest of Technical Papers, San Francisco, CA, USA, 8-12 February, 2009}, pages = {242--243}, publisher = {{IEEE}}, year = {2009}, url = {https://doi.org/10.1109/ISSCC.2009.4977398}, doi = {10.1109/ISSCC.2009.4977398}, timestamp = {Wed, 16 Oct 2019 14:14:55 +0200}, biburl = {https://dblp.org/rec/conf/isscc/FutatsuyamaFTSEKNIKFKAMHHLCHSDTSKKSYSNFMNLMLMWHO09.bib}, bibsource = {dblp computer science bibliography, https://dblp.org} }
@article{DBLP:journals/jssc/TakeuchiKFOHSWF07, author = {Ken Takeuchi and Yasushi Kameda and Susumu Fujimura and Hiroyuki Otake and Koji Hosono and Hitoshi Shiga and Yoshihisa Watanabe and Takuya Futatsuyama and Yoshihiko Shindo and Masatsugu Kojima and Makoto Iwai and Masanobu Shirakawa and Masayuki Ichige and Kazuo Hatakeyama and Shinichi Tanaka and Teruhiko Kamei and Jia{-}Yi Fu and Adi Cernea and Yan Li and Masaaki Higashitani and Gertjan Hemink and Shinji Sato and Ken Oowada and Shih{-}Chung Lee and Naoki Hayashida and Jun Wan and Jeffrey Lutze and Shouchang Tsao and Mehrdad Mofidi and Kiyofumi Sakurai and Naoya Tokiwa and Hiroko Waki and Yasumitsu Nozawa and Kazuhisa Kanazawa and Shigeo Ohshima}, title = {A 56-nm {CMOS} 99-mm\({}^{\mbox{2}}\) 8-Gb Multi-Level {NAND} Flash Memory With 10-MB/s Program Throughput}, journal = {{IEEE} J. Solid State Circuits}, volume = {42}, number = {1}, pages = {219--232}, year = {2007}, url = {https://doi.org/10.1109/JSSC.2006.888299}, doi = {10.1109/JSSC.2006.888299}, timestamp = {Thu, 14 Sep 2023 01:00:00 +0200}, biburl = {https://dblp.org/rec/journals/jssc/TakeuchiKFOHSWF07.bib}, bibsource = {dblp computer science bibliography, https://dblp.org} }
@article{DBLP:journals/jssc/HaraFKSHMNAKFTA06, author = {Takahiko Hara and Koichi Fukuda and Kazuhisa Kanazawa and Noboru Shibata and Koji Hosono and Hiroshi Maejima and Michio Nakagawa and Takumi Abe and Masatsugu Kojima and Masaki Fujiu and Yoshiaki Takeuchi and Kazumi Amemiya and Midori Morooka and Teruhiko Kamei and Hiroaki Nasu and Chi{-}Ming Wang and Kiyofumi Sakurai and Naoya Tokiwa and Hiroko Waki and Tohru Maruyama and Susumu Yoshikawa and Masaaki Higashitani and Tuan D. Pham and Yupin Fong and Toshiharu Watanabe}, title = {A 146-mm\({}^{\mbox{2}}\) 8-gb multi-level {NAND} flash memory with 70-nm {CMOS} technology}, journal = {{IEEE} J. Solid State Circuits}, volume = {41}, number = {1}, pages = {161--169}, year = {2006}, url = {https://doi.org/10.1109/JSSC.2005.859027}, doi = {10.1109/JSSC.2005.859027}, timestamp = {Fri, 22 Oct 2021 01:00:00 +0200}, biburl = {https://dblp.org/rec/journals/jssc/HaraFKSHMNAKFTA06.bib}, bibsource = {dblp computer science bibliography, https://dblp.org} }
@inproceedings{DBLP:conf/isscc/TakeuchiKFOHSWF06, author = {Ken Takeuchi and Yasushi Kameda and Susumu Fujimura and Hiroyuki Otake and Koji Hosono and Hitoshi Shiga and Yoshihisa Watanabe and Takuya Futatsuyama and Yoshihiko Shindo and Masatsugu Kojima and Makoto Iwai and Masanobu Shirakawa and Masayuki Ichige and Kazuo Hatakeyama and Shinichi Tanaka and Teruhiko Kamei and Jia{-}Yi Fu and Adi Cernea and Yan Li and Masaaki Higashitani and Gertjan Hemink and Shinji Sato and Ken Oowada and Shih{-}Chung Lee and Naoki Hayashida and Jun Wan and Jeffrey Lutze and Shouchang Tsao and Mehrdad Mofidi and Kiyofumi Sakurai and Naoya Tokiwa and Hiroko Waki and Yasumitsu Nozawa and Kazuhisa Kanazawa and Shigeo Ohshima}, title = {A 56nm {CMOS} 99mm2 8Gb Multi-level {NAND} Flash Memory with 10MB/s Program Throughput}, booktitle = {2006 {IEEE} International Solid State Circuits Conference, {ISSCC} 2006, Digest of Technical Papers, an Francisco, CA, USA, February 6-9, 2006}, pages = {507--516}, publisher = {{IEEE}}, year = {2006}, url = {https://doi.org/10.1109/ISSCC.2006.1696083}, doi = {10.1109/ISSCC.2006.1696083}, timestamp = {Thu, 14 Sep 2023 01:00:00 +0200}, biburl = {https://dblp.org/rec/conf/isscc/TakeuchiKFOHSWF06.bib}, bibsource = {dblp computer science bibliography, https://dblp.org} }
@article{DBLP:journals/jssc/TanzawaUTSHTMTW02, author = {Toru Tanzawa and Akira Umezawa and Tadayuki Taura and Hitoshi Shiga and Tokumasa Hara and Yoshinori Takano and Takeshi Miyaba and Naoya Tokiwa and Kentaro Watanabe and Hiroshi Watanabe and Kazunori Masuda and Kiyomi Naruke and Hideo Kato and Shigeru Atsumi}, title = {A 44-mm\({}^{\mbox{2}}\) four-bank eight-word page-read 64-Mb flash memory with flexible block redundancy and fast accurate word-line voltage controller}, journal = {{IEEE} J. Solid State Circuits}, volume = {37}, number = {11}, pages = {1485--1492}, year = {2002}, url = {https://doi.org/10.1109/JSSC.2002.802356}, doi = {10.1109/JSSC.2002.802356}, timestamp = {Tue, 21 Mar 2023 00:00:00 +0100}, biburl = {https://dblp.org/rec/journals/jssc/TanzawaUTSHTMTW02.bib}, bibsource = {dblp computer science bibliography, https://dblp.org} }
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